TIM3742-30SL_07 TOSHIBA [Toshiba Semiconductor], TIM3742-30SL_07 Datasheet
TIM3742-30SL_07
Manufacturer Part Number
TIM3742-30SL_07
Description
IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.TIM3742-30SL_07.pdf
(4 pages)
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
Recommended gate resistance(Rg) : Rg= 28 Ω ( MAX.)
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
LOW INTERMODULATION DISTORTION
HIGH POWER
IM3=-45 dBc at Po= 34.5 dBm,
Single Carrier Level
P1dB=45.0 dBm at 3.7GHz to 4.2GHz
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
η
I
th(c-c)
IM
GSoff
DS1
DS2
DSS
ΔG
gm
GSO
1dB
1dB
add
3
V
I
V
I
V
V
I
Channel to Case
(VDS X IDS + Pin – P1dB)
DS
DS
GS
DS
DS
DS
GS
(Single Carrier Level)
f
= 10A
= 100mA
= -350μA
Two-Tone Test
= 3.7 to 4.2GHz
CONDITIONS
CONDITIONS
= 3V
=
=
Po=34.5 dBm
= 0V
V
3V
3V
X Rth(c-c)
DS
HIGH GAIN
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
G1dB=10.0dB at 3.7GHz to 4.2GHz
MICROWAVE POWER GaAs FET
=10
V
TIM3742-30SL
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
44.0
MIN.
-1.0
-42
9.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
Rev. Sep., 2007
TYP. MAX.
45.0
10.0
TYP. MAX.
6300
-45
7.0
7.0
-2.5
41
1.0
⎯
⎯
18
⎯
±0.8
100
8.0
8.0
-4.0
⎯
⎯
⎯
⎯
1.3
⎯
⎯
⎯
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TIM3742-30SL_07 Summary of contents
Page 1
... 10A GSoff 100mA DSS -350μA GSO GS R Channel to Case th(c-c) TIM3742-30SL UNIT MIN. TYP. MAX. dBm 44.0 45.0 dB 9.0 10.0 ⎯ A 7.0 ⎯ ⎯ dB ⎯ dBc -42 -45 ⎯ A 7.0 ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ ...
Page 2
... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM3742-30SL SYMBOL ...
Page 3
... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS ≅ Pin=35.0dBm 3.3 Output Power(Pout) vs. Input Power(Pin) 48 freq.=4.2GHz 47 V =10V DS ≅ TIM3742-30SL 3.4 3.5 Frequency (GHz) Pout ηadd 32 34 Pin(dBm ...
Page 4
... Power Dissipation(PT) vs. Case Temperature(Tc) 120 100 IM3 vs. Output Power Characteristics -10 V =10V DS ≅ freq.=4.2GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM3742-30SL 80 120 Tc( ° 200 160 38 40 ...