R1LP0408CSB-5SI#D0 Renesas, R1LP0408CSB-5SI#D0 Datasheet

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R1LP0408CSB-5SI#D0

Manufacturer Part Number
R1LP0408CSB-5SI#D0
Description
r1lp0408csb-5si#d0...
Manufacturer
Renesas
Datasheet

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R1LP0408CSB-5SI#D0R1LP0408CSB-5SI
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RENESAS/瑞萨
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20 000
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To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website:
Old Company Name in Catalogs and Other Documents
http://www.renesas.com
April 1
Renesas Electronics Corporation
st
, 2010

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R1LP0408CSB-5SI#D0 Summary of contents

Page 1

... On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: Issued by: Renesas Electronics Corporation (http://www ...

Page 2

... Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “ ...

Page 3

R1LP0408C-I Series Wide Temperature Range Version 4M SRAM (512-kword × 8-bit) Description The R1LP0408C 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology ...

Page 4

... R1LP0408C-I Series Ordering Information Type No. Access time R1LP0408CSP-5SI 55 ns R1LP0408CSP-7LI 70 ns R1LP0408CSB-5SI 55 ns R1LP0408CSB-7LI 70 ns R1LP0408CSC-5SI 55 ns R1LP0408CSC-7LI 70 ns Rev.2.00, May.26.2004, page Package 525-mil 32-pin plastic SOP (32P2M-A) 400-mil 32-pin plastic TSOP II (32P3Y-H) 400-mil 32-pin plastic TSOP II reverse (32P3Y-J) ...

Page 5

R1LP0408C-I Series Pin Arrangement 32-pin SOP 32-pin TSOP 1 32 A18 2 31 A16 3 30 A14 4 29 A12 ...

Page 6

R1LP0408C-I Series Block Diagram LSB A11 A9 A8 A15 A18 A10 A13 A17 A16 A14 A12 MSB I/O0 I/O7 CS# Timing Pulse Generator WE# OE# Rev.2.00, May.26.2004, page • • • Memory Matrix Row • × 2,048 ...

Page 7

R1LP0408C-I Series Operation Table WE# CS# OE# Mode × × H Not selected Output disable Read Write Write , ×: V Note ...

Page 8

R1LP0408C-I Series DC Characteristics Parameter Input leakage current Output leakage current Operating current Average operating current Standby current −5SI Standby current to +85°C to +70°C to +40°C to +25°C −7LI to +85°C to +70°C to +40°C to +25°C Output low ...

Page 9

R1LP0408C-I Series AC Characteristics (Ta = −40 to +85° ± 10%, unless otherwise noted.) CC Test Conditions • Input pulse levels 0 • Input rise and fall time • ...

Page 10

R1LP0408C-I Series Write Cycle Parameter Write cycle time Chip selection to end of write Address setup time Address valid to end of write Write pulse width Write recovery time Write to output in high-Z Data to write time overlap Data ...

Page 11

R1LP0408C-I Series Timing Waveform Read Timing Waveform (WE Address CS# OE# High impedance Dout Rev.2.00, May.26.2004, page Valid address OLZ t HZ ...

Page 12

R1LP0408C-I Series Write Timing Waveform (1) (OE# Clock) Address OE# CS# WE# Dout Din Rev.2.00, May.26.2004, page Valid address OHZ High impedance t DW Valid ...

Page 13

R1LP0408C-I Series Write Timing Waveform (2) (OE# Low Fixed) Address CS# WE Dout Din Rev.2.00, May.26.2004, page Valid address WHZ High ...

Page 14

R1LP0408C-I Series Low V Data Retention Characteristics CC (Ta = −40 to +85°C) Parameter V for data retention CC −5SI Data to +85°C retention to +70°C current to +40°C to +25°C −7LI to +85°C to +70°C to +40°C to +25°C ...

Page 15

Revision History Rev. Date Contents of Modification Page Description  1.00 Aug.01.2003 Initial issue 2.00 May.26.2004 6 DC characteristics −5SI and −7LI items’ description are divided. 12 Low V −5SI and −7LI items’ description are divided. 12 Low V 2.4 ...

Page 16

... Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use ...

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