BSP170PL6327HTSA1 Infineon, BSP170PL6327HTSA1 Datasheet

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BSP170PL6327HTSA1

Manufacturer Part Number
BSP170PL6327HTSA1
Description
Mosfet p-Ch 60v 1.9a Sot-223
Manufacturer
Infineon
Datasheet
Rev 2.52
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• Pb-free lead finishing; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, periodic limited by
T
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
BSP 170 P
jmax
®
Small-Signal-Transistor
Package
PG-SOT-223
j
=25 °C, unless otherwise specified
Tape and reel information
L6327: 1000pcs/reel
Symbol Conditions
I
I
E
E
dv /dt
V
P
T
D
D,pulse
j
AS
AR
GS
tot
, T
stg
T
T
T
I
I
di /dt =-200 A/µs,
T
T
JESD22-A114 (HBM)
D
D
page 1
A
A
A
j,max
A
=1.9 A, R
=1.9 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
GS
Product Summary
V
R
I
=48 V,
=25 Ω
D
DS
DS(on),max
Marking
BSP170
1A (250V to 500V)
Lead free
Yes
steady state
-55 ... 150
55/150/56
PG-SOT-223
260 °C
Value
0.18
-1.9
-1.5
-7.6
±20
1.8
70
-6
Packing
Non Dry
BSP 170 P
-1.9
0.3
-60
Unit
A
mJ
kV/µs
V
W
°C
V
A
2009-02-16

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BSP170PL6327HTSA1 Summary of contents

Page 1

SIPMOS ® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead finishing; RoHS compliant Type Package BSP 170 P PG-SOT-223 Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction -soldering point SMD version, device on PCB: Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Transconductance 1) Device on ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

Page 4

Power dissipation P =f(T ) tot A 1.8 1.5 1.2 0.9 0.6 0 Safe operating area =25 ° parameter ...

Page 5

Typ. output characteristics I =f =25 ° parameter - -6V - Typ. transfer characteristics I ...

Page 6

Drain-source on-state resistance R =f =-1 DS(on 600 550 500 450 400 98 % 350 300 250 200 150 100 50 0 -60 - Typ. capacitances C =f(V ); ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage V =f =-250 µA BR(DSS ...

Page 8

Package Outline SOT-223: Outline Footprint Operating and storage temperature Dimensions in mm Rev 2.52 Packaging Tape page 8 BSP 170 P 2009-02-16 ...

Page 9

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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