K6X0808C1D-BF55000 Samsung, K6X0808C1D-BF55000 Datasheet - Page 2

• Manufacturer Part Number: K6X0808C1D-BF55000
• Description: power, ram, low, Memory, Semiconductors and Actives, bit, cmos
• Manufacturer: Samsung

VSS
I/O1
I/O2
I/O3
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
K6X0808C1D Family
32Kx8 bit Low Power full CMOS Static RAM
PRODUCT FAMILY
1. The parameters are tested with 50pF test load
PIN DESCRIPTION
FEATURES
• Process Technology: Full CMOS
• Organization: 32K x 8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 28-DIP-600B, 28-SOP-450,
Pin Name
Product Family Operating Temperature Vcc Range
K6X0808C1D-F
K6X0808C1D-Q Automotive(-40~125°C)
A
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
0
WE
CS
OE
~A
28-SOP
14
28-DIP
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Function
28
27
26
25
24
23
22
21
20
19
18
17
16
15
28-TSOP1-0813.4F/R
VCC
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
Industrial(-40~85°C)
VCC
VCC
A11
A13
A14
A12
A12
A14
A13
A11
WE
WE
OE
OE
A9
A8
A7
A6
A5
A4
A3
A3
A4
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
14
13
12
11
10
9
8
7
6
5
4
3
2
1
Pin Name
I/O
Vcc
NC
1
Vss
Type1 - Forward
Type1 - Reverse
~I/O
28-TSOP
28-TSOP
8
Data Inputs/Outputs
Power
Ground
No connect
4.5~5.5V
Function
28
27
26
25
24
23
22
21
20
19
18
17
16
15
15
16
17
18
19
20
21
22
23
24
25
26
27
28
55
Speed
70ns
1)
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS
A10
/70ns
2
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
The K6X0808C1D families are fabricated by SAMSUNG′s
(I
Standby
WE
SB1
CS
OE
Power Dissipation
15µA
50µA
Row
Addresses
, Max)
I/O
I/O
1
8
Control
logic
(I
Operating
CC2,
25mA
Clk gen.
Max)
Data
cont
Data
cont
Row
select
28-SOP-450, 28-TSOP1-0813.4F
28-DIP-600B, 28-SOP-450,
28-TSOP1-0813.4F/R
CMOS SRAM
Column Addresses
Precharge circuit.
PKG Type
Memory array
Column select
I/O Circuit
Revision 3.0
March 2005