IS49NLC36160-25EBL ISSI, IS49NLC36160-25EBL Datasheet - Page 22

• Manufacturer Part Number: IS49NLC36160-25EBL
• Description: DRAM 576M, x36, 400Mhz RLDRAM2
• Manufacturer: ISSI

Specifications of IS49NLC36160-25EBL

• Rohs: yes
• Organization: 16 M x 36
• Package / Case: FBGA-144
• Memory Size: 576 Mbit
• Maximum Clock Frequency: 400 MHz
• Access Time: 2.5 ns
• Supply Voltage - Max: 2.63 V
• Supply Voltage - Min: 2.38 V
• Maximum Operating Current: 380 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT

IS49NLC96400,IS49NLC18320,IS49NLC36160
3.9 Auto Refresh Command (AREF)
The Auto Refresh command performs a refresh cycle on one row of a specific bank of the memory. Only bank addresses are required
together with the control the pins. Therefore, Auto Refresh commands can be issued on subsequent CK clock cycles on both
multiplexed and non-multiplexed address mode. Any command following an Auto Refresh command must meet a tRC timing delay
or later.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 12/4/2012
Bank Address
Command
Address
Command
QVLD
QKx#
DKx#
DKx
QKx
CK#
DQ
CK
QKx#
QKx
CK#
CK
BA1,A1
WR
0
t
CKH
NOP
1
t
CKL
AREFx
BAx
0
BA2, A2
RD
2
Write Latency = 5
AREF example in t
t
CK
Write Followed by Read: BL=2 RL=4 & WL=5
AREFy
BAy
BA3, A3
1
RD
3
Read Latency = 4
RC
(t
NOP
4
CK
NOP
)=5 option: Configuration=5
2
t
D1-1
NOP
RC
5
D1-2
NOP
3
NOP
6
t
RC
Q2-1
Q2-2
NOP
4
NOP
7
Don’t Care
Don’t Care
Q3-1
Q3-2
NOP
ANYCOMx
8
BAx
5
Undefined
NOP
9
ANYCOMy
BAy
22
6