AS4C8M16S-6TCN Alliance Memory, AS4C8M16S-6TCN Datasheet - Page 35

• Manufacturer Part Number: AS4C8M16S-6TCN
• Description: DRAM 128M SDRAM 8M X 16 166MHz
• Manufacturer: Alliance Memory

Specifications of AS4C8M16S-6TCN

• Rohs: yes
• Data Bus Width: 16 bit
• Organization: 8 M x 16
• Package / Case: TSOP II-54
• Memory Size: 128 Mbit
• Maximum Clock Frequency: 166 MHz
• Access Time: 5.4 ns
• Supply Voltage - Max: 4.6 V
• Supply Voltage - Min: 1 V
• Maximum Operating Current: 120 mA
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT

Figure 30. Random Row Write (Interleaving Banks)
WE#
BA0,1
A0-A9,
A11
CLK
CKE
CS#
RAS#
CAS#
A10
DQM
DQ
FEBRUARY 2011
Hi-Z
High
Activate
Cammand
Bank A
* t
RAx
RAx
WR
T0
t
RCD
(Burst Length=8)
> t
T1
WR
T2 T3
(min.)
Write
Command
Bank A
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1 DBx2
CAx
T4
T5
T6
T7
Activate
Command
Bank B
RBx
RBx
T8
T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Write
Command
Bank B
35
CBx
t
WR*
Precharge
Command
Bank A
t
DBx3 DBx4 DBx5 DBx6 DBx7 DAy0 DAy1 DAy2 DAy3
RP
Activate
Command
Bank A
RAy
RAy
t
WR*
Write
Command
Bank A
Don’t Care
CAy
AS4C8M16S
Precharge
Command
Bank B