LCMXO640E-5FN256C Lattice, LCMXO640E-5FN256C Datasheet - Page 33

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LCMXO640E-5FN256C

Manufacturer Part Number
LCMXO640E-5FN256C
Description
CPLD - Complex Programmable Logic Devices Use LCMXO640E-5FTN25
Manufacturer
Lattice
Datasheet

Specifications of LCMXO640E-5FN256C

Rohs
yes
Memory Type
SRAM
Number Of Macrocells
320
Maximum Operating Frequency
600 MHz
Delay Time
3.5 ns
Number Of Programmable I/os
159
Operating Supply Voltage
1.2 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
0 C
Package / Case
FPBGA
Mounting Style
SMD/SMT
Factory Pack Quantity
450
Supply Current
14 mA
Supply Voltage - Max
1.26 V
Supply Voltage - Min
1.14 V
Lattice Semiconductor
sysIO Single-Ended DC Electrical Characteristics
LVCMOS 3.3
LVTTL
LVCMOS 2.5
LVCMOS 1.8
LVCMOS 1.5
LVCMOS 1.2
(“C” Version)
LVCMOS 1.2
(“E” Version)
PCI
1. The average DC current drawn by I/Os between GND connections, or between the last GND in an I/O Bank and the end of an I/O Bank, as
Input/Output
shown in the logic signal connections table shall not exceed n * 8mA. Where n is the number of I/Os between Bank GND connections or
between the last GND in a Bank and the end of a Bank.
Standard
Min. (V)
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
V
0.35V
0.35V
IL
0.3V
Max. (V)
0.35V
0.42
0.8
0.8
0.7
CCIO
CCIO
CCIO
CC
0.65V
0.65V
0.5V
0.65V
Min. (V)
0.78
2.0
2.0
1.7
CCIO
CCIO
CCIO
CC
V
IH
Max. (V)
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3-7
V
0.1V
OL
0.4
0.2
0.4
0.4
0.2
0.4
0.2
0.4
0.2
0.4
0.2
0.4
0.2
0.4
0.2
(V)
Max.
CCIO
DC and Switching Characteristics
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
0.9V
CCIO
CCIO
CCIO
CCIO
CCIO
CCIO
CCIO
CCIO
CCIO
CCIO
CCIO
CCIO
CCIO
CCIO
OH
(V)
2.4
CCIO
Min.
- 0.4
- 0.2
- 0.4
- 0.2
- 0.4
- 0.2
- 0.4
- 0.2
- 0.4
- 0.2
- 0.4
- 0.2
- 0.4
- 0.2
MachXO Family Data Sheet
16, 12, 8, 4
16, 12, 8, 4
16, 12, 8, 4
12, 8, 4
(mA)
I
8, 4
6, 2
6, 2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1.5
OL
16
1
-14, -12, -8, -4
-14, -12, -8, -4
-14, -12, -8, -4
-12, -8, -4
-8, -4
-6, -2
-6, -2
(mA)
I
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.5
-16
OH
1

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