AT28BV64B-20TU Atmel, AT28BV64B-20TU Datasheet

IC EEPROM 64KBIT 200NS 28TSOP

AT28BV64B-20TU

Manufacturer Part Number
AT28BV64B-20TU
Description
IC EEPROM 64KBIT 200NS 28TSOP
Manufacturer
Atmel
Datasheets

Specifications of AT28BV64B-20TU

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
200ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-TSOP
Capacitance, Input
4 pF
Capacitance, Output
8 pF
Current, Input, Leakage
10 μA
Current, Operating
15 mA
Current, Output, Leakage
10
Data Retention
10 yrs.
Density
64K
Organization
8K×8
Package Type
TSOP
Power Dissipation
54 mW
Temperature, Operating
-40 to +85 °C
Time, Access
200 ns
Time, Address Hold
100
Voltage, Input, High
2 V
Voltage, Input, Low
0.6 V
Voltage, Output, High
2 V
Voltage, Output, Low
0.45 V
Voltage, Supply
2.7 to 3.6 V
Interface Type
Parallel
Access Time (max)
200ns
Write Protection
Yes
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Supply Current
15mA
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
28
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT28BV64B-20TU
Manufacturer:
ATMEL
Quantity:
30
Part Number:
AT28BV64B-20TU
Manufacturer:
ATMEL
Quantity:
20 000
Features
1. Description
The AT28BV64B is a high-performance electrically erasable programmable read only-
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 200 ns with power dissipation of just 54 mW. When the device is
deselected, the CMOS standby current is less than 20 µA.
The AT28BV64B is accessed like a static RAM for the read or write cycle without the
need for external components. The device contains a 64 byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28BV64B has additional features to ensure high quality and manufactura-
bility. A software data protection mechanism guards against inadvertent writes. The
device also includes an extra 64 bytes of EEPROM for device identification or
tracking.
Single 2.7V to 3.6V Supply
Hardware and Software Data Protection
Low Power Dissipation
Fast Read Access Time – 200 ns
Automatic Page Write Operation
Fast Write Cycle Times
DATA Polling for End of Write Detection
High-reliability CMOS Technology
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
– 15 mA Active Current
– 20 µA CMOS Standby Current
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
– Page Write Cycle Time: 10 ms Maximum
– 1 to 64 Byte Page Write Operation
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
64K (8K x 8)
Battery-Voltage
Parallel
EEPROM
with Page Write
and Software
Data Protection
AT28BV64B

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AT28BV64B-20TU Summary of contents

Page 1

... When the device is deselected, the CMOS standby current is less than 20 µA. The AT28BV64B is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64 byte page register to allow writing bytes simultaneously ...

Page 2

... Exposure to absolute maximum rating conditions for extended periods may affect device reliability + 0.6V CC Condition I 0. MHz OUT -100 µA OH AT28BV64B WE I OUT High High Z V High Z IL Min Max Units 10 µA 10 µA 50 µ ...

Page 3

... OE may be delayed without impact ACC specified from whichever occurs first ( This parameter is characterized and is not 100% tested. AT28BV64B 6 (1)(2)(3)( after the address transition without impact after the falling edge of CE without impact pF). L AT28BV64B-20 Min Max Units 200 ns 200 ACC ...

Page 4

... Input Test Waveforms and Measurement Level 12. Output Test Load 13. Pin Capacitance ( MHz 25°C Symbol Typ OUT Note: 1. This parameter is characterized and is not 100% tested < Max 6 12 AT28BV64B Units Conditions OUT 7 ...

Page 5

... Data, OE Hold Time DH OEH t Time to Data Valid DV t Write Pulse Width High WPH Notes Restriction 2. All byte write operations must be preceded by the SDP command sequence. 15. AC Write Waveforms 15.1 WE Controlled 15.2 CE Controlled AT28BV64B 8 Min Max Units 0 ns 100 200 ns 100 ns 0 ...

Page 6

... LOAD DATA AA TO ADDRESS 1555 LOAD DATA 55 TO ADDRESS 0AAA LOAD DATA A0 TO ADDRESS 1555 WRITES ENABLED LOAD DATA XX TO (3) ANY ADDRESS LOAD LAST BYTE TO LAST ADDRESS ENTER DATA PROTECT STATE AT28BV64B Min Max Units 10 0 100 100 0 200 100 100 ( µ ...

Page 7

... The following table lists standard Atmel products that can be ordered. Device Numbers Speed AT28BV64B 20 AT28BV64B 12 (1) Ordering Code AT28BV64B-20JI AT28BV64B-20PI AT28BV64B-20SI AT28BV64B-20TI Ordering Code AT28BV64B-20JU AT28BV64B-20TU AT28BV64B-20SU Package Type Package and Temperature Combinations JI, JU, PI, SI, SU, TI, TU Package Operation Range 32J Industrial 28P6 (-40° 85° C) 28S 28T Package Operation Range ...

Page 8

... Notes: 1. This package conforms to JEDEC reference MO-183. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion 0.15 mm per side and 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. TITLE 2325 Orchard Parkway San Jose, CA 95131 R AT28BV64B 16 PIN 1 0º ~ 5º SEATING PLANE A1 28T, 28-lead ( ...

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