IS62C1024AL-35QLI ISSI, Integrated Silicon Solution Inc, IS62C1024AL-35QLI Datasheet - Page 3

• Manufacturer Part Number: IS62C1024AL-35QLI
• Description: IC SRAM 1MBIT 35NS 32SOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: Asynchronousr

Specifications of IS62C1024AL-35QLI

• Memory Size: 1M (128K x 8)
• Package / Case: 32-SOP
• Interface: Parallel
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 35ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 35 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 30 mA
• Organization: 128 K x 8
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Density: 1Mb
• Access Time (max): 35ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 17b
• Package Type: SOP
• Operating Temp Range: -40C to 85C
• Supply Current: 30mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 128K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 706-1041

IS62C1024AL
IS65C1024AL
ABSOLUTE MAXIMUM RATINGS
t
P
I
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
DC ELECTRICAL CHARACTERISTICS
V
V
V
I
I
Note:
1. V
V
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. H
06/26/08
CAPACITANCE
c
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Symbol
V
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Symbol Parameter
V
Symbol
c
Il
out
lI
lo
Ih
stg
(min.) = -0.3V DC; V
term
t
oh
ol
Ih
Il
In
out
(max.) = V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
DD
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
+ 0.3V DC; V
a
Parameter
Input Capacitance
Output Capacitance
(1,2)
= 25°c, f = 1 MHz, V
Il
(min.) = -2.0V AC (pulse width -2.0 ns). Not 100% tested.
Ih
(max.) = V
(1)
DD
DD
+ 2.0V AC (pulse width -2.0 ns). Not 100% tested.
Test Conditions
V
V
GND ≤ V
GND ≤ V
CE1 = V
CE2 = V
WE = V
= 5.0V.
DD
DD
(1)
= Min., I
= Min., I
Il
Ih
Il
In
out
, or OE = V
, or
(Over Operating Range)
≤ V
oh
ol
≤ V
Conditions
V
DD
V
= 2.1 mA
= –1.0 mA
out
DD
1-800-379-4774
In
= 0V
= 0V
Ih
or
Options
–0.5 to +7.0
–65 to +125
Com.
Com.
Auto.
Auto.
Ind.
Ind.
Value
1.0
20
Max.
Min.
-0.5
2.4
2.2
6
8
—
-1
-2
-5
-1
-2
-5
V
DD
Max.
0.4
0.8
—
1
2
5
1
2
5
+ 0.5
Unit
Unit
mA
°C
W
pF
pF
V
Unit
µA
µA
V
V
V
V
3