IS62C1024AL-35QLI ISSI, Integrated Silicon Solution Inc, IS62C1024AL-35QLI Datasheet - Page 4

IC SRAM 1MBIT 35NS 32SOP

IS62C1024AL-35QLI

Manufacturer Part Number
IS62C1024AL-35QLI
Description
IC SRAM 1MBIT 35NS 32SOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
Asynchronousr
Datasheet

Specifications of IS62C1024AL-35QLI

Memory Size
1M (128K x 8)
Package / Case
32-SOP
Interface
Parallel
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
35ns
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Access Time
35 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
30 mA
Organization
128 K x 8
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
5 V
Density
1Mb
Access Time (max)
35ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
17b
Package Type
SOP
Operating Temp Range
-40C to 85C
Supply Current
30mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
706-1041

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IS62C1024AL
IS65C1024AL
IS62C1024AL/IS65C1024AL
POWER SUPPLY CHARACTERISTICS
I
I
I
Note:
1. At f = f
2. Typical Values are measured at V
READ CYCLE SWITCHING CHARACTERISTICS
t
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.6
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
4
Symbol Parameter
I
Symbol
cc
cc
sb
sb
t
t
t
t
t
t
t
t
t
t
to 2.4V and output loading specified in Figure 1a.
rc
aa
oha
ace
ace
Doe
lzoe
hzoe
lzce
lzce
hzce
1
2
1
1
2
1
2
(2)
(2)
(2)
(2)
(2)
max
Average operating
Current
V
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs) CE1 ≥ V
DD
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Dynamic Operating V
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE1 Access Time
CE2 Access Time
OE Access Time
OE to Low-Z Output
OE to High-Z Output
CE1 to Low-Z Output
CE2 to Low-Z Output
CE1 or CE2 to High-Z Output
Test Conditions
CE1 = V
V
I
I
V
CE2 = V
V
V
or CE2 ≤ V
V
ce2 ≤ 0.2V, V
or V
DD
out
I/o
In
DD
In
DD
In
DD
= 5V, T
= 0 mA, f=0
= V
= V
= V
In
= Max., CE1 = V
= Max.,
= Max.,
= 0 mA, f = f
≤ V
Ih
Ih
Ih
Il
Ih
DD
or V
or V
or V
ss
, ce2 = V
a
Il
= 25
– 0.2V, or
, f = 0
+ 0.2V, f = 0
Il
Il
Il
In
,
, CE1 ≥ V
o
≥ V
C and not 100% tested.
max
(1)
Integrated Silicon Solution, Inc. — www.issi.com —
Ih
DD
(Over Operating Range)
Il
– 0.2V, Auto.
Ih
,
Min.
35
3
3
0
3
3
0
Com.
Com.
Com.
Com.
-35 ns
typ.
typ.
Auto.
Auto.
Auto.
Ind.
Ind.
Ind.
Ind.
(1)
(2)
(2)
(Over Operating Range)
Max.
35
35
35
10
10
10
Min.
-35 ns
Min.
45
3
5
0
5
5
0
Max.
1.5
25
30
30
35
20
10
-45 ns
1
5
4
Max.
45
45
45
20
15
15
Min. Max.
-45 ns
35
40
45
2
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1-800-379-4774
Unit
mA
mA
mA
µA
06/26/08
Rev. H

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