MT45W1MW16BDGB-708 AT TR Micron Technology Inc, MT45W1MW16BDGB-708 AT TR Datasheet - Page 29

• Manufacturer Part Number: MT45W1MW16BDGB-708 AT TR
• Description: IC PSRAM 16MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BDGB-708 AT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1419-2

Electrical Characteristics
Table 7:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
Absolute Maximum Ratings
Notes:
1. –30°C exceeds the CellularRAM Workgroup 1.0 specification of –25°C.
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Voltage to any ball except V
to V
Voltage on V
Voltage on V
Storage temperature (plastic)
Operating temperature (case)
Soldering temperature and time
Wireless
Industrial
10 seconds (solder ball only)
SS
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
1
CC
CC
Q supply relative to V
supply relative to V
Parameter
CC
, V
29
CC
Q relative
SS
SS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
–0.5V to (4.0V or V
Electrical Characteristics
–55ºC to +150ºC
–0.2V to +2.45V
–30ºC to +85ºC
–40ºC to +85ºC
–0.2V to +4.0V
©2005 Micron Technology, Inc. All rights reserved.
Rating
+260ºC
CC
less)
Q + 0.3V, whichever is