MT45W1MW16BDGB-708 AT TR Micron Technology Inc, MT45W1MW16BDGB-708 AT TR Datasheet - Page 41

IC PSRAM 16MBIT 70NS 54VFBGA

MT45W1MW16BDGB-708 AT TR

Manufacturer Part Number
MT45W1MW16BDGB-708 AT TR
Description
IC PSRAM 16MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc

Specifications of MT45W1MW16BDGB-708 AT TR

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1419-2
Figure 31:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
DQ[15:0]
LB#/UB#
A[19:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
4-Word Burst READ Operation
High-Z
Note:
READ Burst Identified
t SP
t CSP
ADDRESS
t SP
t SP
(WE# = HIGH)
VALID
t CEW
t HD
t HD
t HD
Non-default BCR settings for 4-word burst READ operation: Latency code two (three
clocks); WAIT active LOW; WAIT asserted during delay.
High-Z
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
t ABA
t OLZ
t KHKL
t BOE
t ACLK
t KHTL
t CLK
41
OUTPUT
VALID
t CEM
t KOH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OUTPUT
VALID
t KP
OUTPUT
VALID
DON’T CARE
©2005 Micron Technology, Inc. All rights reserved.
t KP
OUTPUT
VALID
Timing Diagrams
t HD
t
OHZ
t
HZ
t CBPH
UNDEFINED
High-Z

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