MT45W1MW16BDGB-708 AT TR Micron Technology Inc, MT45W1MW16BDGB-708 AT TR Datasheet - Page 59

• Manufacturer Part Number: MT45W1MW16BDGB-708 AT TR
• Description: IC PSRAM 16MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BDGB-708 AT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1419-2

Rev. A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .08/05
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
• Page 1, Figure 1: changed E3 ball color to white
• Page 1: changed multiple “-” to “–” for negative numbers (per style)
• Eliminated holdover references to dual parts (pgs. 10 and 30)
• Updated to state that “CLK must be held static LOW or HIGH” during async READ and
• Updated note 4 in Table 8 to eliminate reference to dual part (was “BCR[5:4] = 00b”)
• Initial release with “Advance” designation.
WRITE (pgs. 7, 10, 11, 14)
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
Revision History