IS42S16400F-6TL ISSI, Integrated Silicon Solution Inc, IS42S16400F-6TL Datasheet - Page 12

• Manufacturer Part Number: IS42S16400F-6TL
• Description: IC SDRAM 64MBIT 166MHZ 54TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16400F-6TL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 130mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 166 MHz
• Access Time: 6 ns, 5.4 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 130 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1075; IS42S16400F-6TL

IS42S16400F
IC42S16400F
DC ELECTRICAL CHARACTERISTICS
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time in-
2. Icc
3. Input signal chnage once per 30ns.
12
Symbol Parameter
i
i
V
V
i
i
I
i
I
i
i
i
I
i
i
i
il
ol
cc1
cc2p
cc2ps
cc2N
cc2Ns
cc3p
cc3ps
cc3N
cc3Ns
cc4
cc5
cc6
oh
ol
creases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between V
to suppress power supply voltage noise (voltage drops) due to these transient currents.
(3)
(3)
1
and Icc
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Operating Current
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
Active Standby Current
(In Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Operating Current
(In Burst Mode)
Auto-Refresh Current
Self-Refresh Current
4
depend on the output load. The maximum values for Icc
(1)
(1,2)
Test Condition
0V ≤ V
the tested pin at 0V
Output is disabled, 0V ≤ V
i
i
One Bank Operation,
Burst Length=1
t
I
CKE ≤ V
CKE ≥ V
CKE ≤ V
CKE ≥ V
t
I
BL = 4; 4 banks activated
t
t
CKE ≤ 0.2V
out
out
rc
out
ck
out
rc
clk
≥ t
= t
= t
= t
= –2 mA
= +2 mA
= 0mA
= 0mA
rc
ck
rc
iN
clk
il
ih
il
ih
≤ V
(min.)
(
(
miN
miN
(
(
(
(
(
max
miN
miN
miN
max
DD
(Recommended Operation Conditions unless otherwise noted.)
)
)
)
, with pins other than
)
)
)
)
out
CAS latency = 3 Com.
CAS latency = 3 Com.
1
CAS latency = 3Com.
≤ V
t
t
t
t
t
t
t
t
ck
ck
ck
ck
ck
ck
ck
ck
and Icc
Integrated Silicon Solution, Inc. — www.issi.com
DD
= 15ns
= ∞
= 15ns
= ∞
= 10ns
= ∞
= 15ns
= ∞
4
are obtained with the output open state.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Speed
DD
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-5
-6
-7
-5
-6
-7
-5
-6
-7
-5
-6
-7
-5
-6
-7
-5
-6
-7
and GND for each memory chip
Min.
2.4
–5
–5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
110
180
155
145
140
130
100
150
140
110
160
150
130
180
170
150
0.4
95
85
20
15
15
30
25
25
—
5
5
2
4
2
3
7
7
5
5
2
03/19/08
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
Rev. A
V
V