IS42S16400F-6TL ISSI, Integrated Silicon Solution Inc, IS42S16400F-6TL Datasheet - Page 31

• Manufacturer Part Number: IS42S16400F-6TL
• Description: IC SDRAM 64MBIT 166MHZ 54TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16400F-6TL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 130mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 166 MHz
• Access Time: 6 ns, 5.4 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 130 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1075; IS42S16400F-6TL

IS42S16400F
IC42S16400F
PRECHARGE
The PRECHARGE command (see figure) is used to deac-
tivate the open row in a particular bank or the open row in
all banks.The bank(s) will be available for a subsequent row
access some specified time (t
command is issued. Input A10 determines whether one or
all banks are to be precharged, and in the case where only
one bank is to be precharged, inputs BA0, BA1 select the
bank. When all banks are to be precharged, inputs BA0,
BA1 are treated as “Don’t Care.” Once a bank has been
precharged, it is in the idle state and must be activated
prior to any READ or WRITE commands being issued to
that bank.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
03/19/08
POWER-DOWN
Power-down occurs if CKE is registered LOW coincident
with a NOP or COMMAND INHIBIT when no accesses
are in progress. If power-down occurs when all banks are
idle, this mode is referred to as precharge power-down;
if power-down occurs when there is a row active in either
bank, this mode is referred to as active power-down.
Entering power-down deactivates the input and output
buffers, excluding CKE, for maximum power savings while
in standby. The device may not remain in the power-down
state longer than the refresh period (64ms) since no refresh
operations are performed in this mode.
The power-down state is exited by registering a NOP or
COMMAND INHIBIT and CKE HIGH at the desired clock
edge (meeting t
POWER-DOWN
cks
COMMAND
). See figure below.
CKE
CLK
All banks idle
Enter power-down mode
rp
) after the PRECHARGE
t
NOP
CKS
Input buffers gated off
PRECHARGE Command
Exit power-down mode
BA0, BA1
A0-A9, A11
CKE
RAS
CAS
CLK
A10
WE
CS
≥ t
HIGH - Z
CKS
NOP
DON'T CARE
BANK ADDRESS
BANK SELECT
ACTIVE
ALL BANKS
t
t
t
RCD
RAS
RC
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