IS42S32160A-75BL ISSI, Integrated Silicon Solution Inc, IS42S32160A-75BL Datasheet - Page 54

IC SDRAM 512MBIT 133MHZ 90BGA

IS42S32160A-75BL

Manufacturer Part Number
IS42S32160A-75BL
Description
IC SDRAM 512MBIT 133MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet

Specifications of IS42S32160A-75BL

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
512M (16M x 32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-BGA
Organization
16Mx32
Density
512Mb
Address Bus
14b
Access Time (max)
6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
Mini BGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
185mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1061

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S32160A-75BL
Manufacturer:
ISSI
Quantity:
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Part Number:
IS42S32160A-75BL
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32160A-75BL-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32160A-75BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32160A-75BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS42S32160A
54
Figure 20.Byte Write Operation (Burst Length=4,CAS#Latency=2)
DQ8 - DQ15
DQ0 - DQ7
DQM1,2,3
DQM0
BS0,1
ADD
CAS#
RAS#
WE#
CKE
CLK
CS#
A10
High
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
Command
Bank A
CK2
Read
CAx
Upper 3 Bytes
are masked
Ax0
Ax1
Ax1
Lower Byte
is masked
Ax2
Ax2
Ax3
Command
Bank A
Write
DAy0 DAy1
CAy
DAy1 DAy2
Upper 3 Bytes
are masked
DAy3
Command
Bank A
CAz
Read
Integrated Silicon Solution, Inc.
Lower Byte
is masked
Az1
Az1
Az2
Az2
Az3
Lower Byte
is masked
Rev. 00E
07/21/09

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