C8051T323-GMR Silicon Labs, C8051T323-GMR Datasheet - Page 36
C8051T323-GMR
Manufacturer Part Number
C8051T323-GMR
Description
8-bit Microcontrollers - MCU USB-OTP-16K-QFN28
Manufacturer
Silicon Labs
Datasheet
1.C8051T322-GQR.pdf
(292 pages)
Specifications of C8051T323-GMR
Rohs
yes
Core
8051
Data Bus Width
8 bit
Processor Series
C8051
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C8051T620/621/320/321/322/323
Table 7.5. Internal Voltage Regulator Electrical Characteristics
–40 to +85 °C unless otherwise specified.
Table 7.6. EPROM Electrical Characteristics
36
Parameter
Voltage Regulator (REG0)
Input Voltage Range
Output Voltage (V
Output Current
VBUS Detection Input
Threshold
Bias Current
Dropout Voltage (V
Voltage Regulator (REG1)
Input Voltage Range
Bias Current
Notes:
Parameter
EPROM Size (Note 1)
Write Cycle Time (per Byte)
(Note 2)
In-Application Programming
Write Cycle Time (per Byte)
(Note 3)
Programming Voltage (V
Capacitor on V
cation Programming
Notes:
1. Input range specified for regulation. When an external regulator is used, should be tied to
2. Output current is total regulator output, including any current required by the
3. The minimum input voltage is 2.7 V or
1. 512 bytes at location 0x3E00 to 0x3FFF are not available for program storage
2. For devices with a Date Code prior to 1040, the programming time over the C2 interface is twice as long. See
3. Duration of write time is largely dependent on VIO voltage, supply voltage, and residual charge on the VPP
C8051T620/621/320/321/322/323.
Section 18.1.1
capacitor. The majority of the write time consists of charging the voltage on VPP to 6.0 V. These
measurements include the VPP ramp time and VDD = VIO = 3.3 V
2
PP
DD
for In-appli-
DO
1, 3
)
2
)
for more information.
3
PP
)
Conditions
Output Current = 1 to 100 mA
Normal Mode (REG0MD = 0)
Low Power Mode (REG0MD = 1)
I
I
Normal Mode (REG1MD = 0)
Low Power Mode (REG1MD = 1)
DD
DD
Conditions
C8051T620/621/320/321/322/
323
Capacitor on V
fully discharged
Capacitor on V
initially charged to 3.3 V
= 1 mA
= 100 mA
V
DD
+
PP
PP
V
Rev. 1.1
= 4.7 µF and
= 4.7 µF and
DO
(max load), whichever is greater.
16384
5.75
Min
105
—
—
—
Min
2.7
3.3
2.5
1.8
—
—
—
—
—
—
—
Typ
155
6.0
4.7
37
26
—
3.45
Typ
100
320
83
38
—
—
—
—
1
Max
6.25
205
—
—
—
—
V
DD
Max
5.25
100
425
175
3.6
3.6
.
98
52
—
—
—
Bytes
Units
mV/mA
mV/mA
ms
ms
µF
µs
Units
V
mA
µA
µA
µA
V
V
V
V
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