CY62126EV30LL-45ZSXI Cypress Semiconductor Corp, CY62126EV30LL-45ZSXI Datasheet - Page 4

• Manufacturer Part Number: CY62126EV30LL-45ZSXI
• Description: IC SRAM 1MBIT 45NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62126EV30LL-45ZSXI

• Memory Size: 1M (64K x 16)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 16 mA
• Organization: 64 K x 16
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V or 3.3 V
• Memory Configuration: 64K X 16
• Supply Voltage Range: 2.2V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2063; CY62126EV30LL-45ZSXI

Maximum Ratings
Exceeding maximum ratings may shorten the battery life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground
potential .............................. –0.3 V to 3.6 V (V
DC voltage applied to outputs
in High Z state
Electrical Characteristics
(Over the Operating Range)
Document #: 38-05486 Rev. *H
Notes
V
V
V
V
I
I
I
I
I
Parameter
3. V
4. V
5. Full device AC operation assumes a 100 s ramp time from 0 to V
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
7. Chip enable (CE) needs to be tied to CMOS levels to meet the I
IX
OZ
CC
SB1
SB2
OH
OL
IH
IL
IL(min)
IH(max)
[7]
= –2.0 V for pulse durations less than 20 ns.
= V
CC
Output high voltage
Output low voltage
Input high voltage
Input low voltage
Input leakage current
Output leakage current GND < V
V
current
Automatic CE power
down current —CMOS
inputs
Automatic CE power
down current —CMOS
inputs
[3, 4]
+0.75 V for pulse durations less than 20 ns.
CC
operating supply
Description
.............. –0.3 V to 3.6 V (V
I
I
I
I
V
V
V
V
GND < V
f = f
f = 1 MHz
CE > V
V
f = f
f = 0 (OE, BHE, BLE and WE),
V
CE > V
V
f = 0, V
OH
OH
OL
OL
CC
CC
CC
CC
IN
CC
IN
= 0.1 mA
= 2.1mA, V
max
> V
max
= –0.1 mA
= –1.0 mA, V
> V
= 2.2 V to 2.7 V
= 2.7 V to 3.6 V
= 2.2 V to 2.7 V
= 2.7 V to 3.6 V
= 3.60V
CC
CC
CC
CC
CC
(Address and Data Only),
= 1/t
Test Conditions
CCmax
CCmax
O
I
< V
0.2 V,
– 0.2 V, V
< V
– 0.2 V,
= 3.60V
– 0.2 V or V
RC
CC
CC
CC
+ 0.3 V)
+ 0.3 V)
SB2
, Output Disabled
CC
V
I
CMOS levels
cc
> 2.70V
OUT
/ I
(min) and 200 s wait time after V
CC
IN
> 2.70V
CCDR
< 0.2 V)
= V
IN
= 0 mA
< 0.2 V,
spec. Other inputs can be left floating.
CCmax
DC input voltage
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage.......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up current..................................................... > 200 mA
Operating Range
CY62126EV30LL
–0.3
–0.3
Min
2.0
2.4
1.8
2.2
Device
–1
–1
–
–
–
–
–
45 ns (Industrial)
Typ
1.3
11
–
–
–
–
–
–
–
–
–
–
1
1
cc
[6]
stabilization.
[3, 4]
V
V
CC
CC
Automotive –40 °C to +125 °C
 0.3 V to 3.6 V (V
Max
Industrial
0.4
0.4
0.6
0.8
2.0
+1
+1
16
Range
–
–
4
4
+ 0.3
+ 0.3
CC
= V
CY62126EV30 MoBL
CC(typ)
–0.3
–0.3
Min
2.0
2.4
1.8
2.2
–4
–4
55 ns (Automotive)
–
–
–
–
–
–
–40 °C to +85 °C
, T
Temperature
A
Typ
= 25 °C.
1.3
Ambient
11
–
–
–
–
–
–
–
–
–
1
1
[6]
V
V
CC
CC
CCmax
Max
0.4
0.4
0.6
0.8
4.0
+4
+4
35
35
30
–
–
+ 0.3
+ 0.3
Page 4 of 16
+ 0.3 V)
2.2 V to
V
3.6 V
CC
Unit
mA
A
A
A
A
V
V
V
V
V
V
V
V
[5]
