CY7C1021BNV33L-15ZXI Cypress Semiconductor Corp, CY7C1021BNV33L-15ZXI Datasheet - Page 3

IC SRAM 1MBIT 15NS 44TSOP

CY7C1021BNV33L-15ZXI

Manufacturer Part Number
CY7C1021BNV33L-15ZXI
Description
IC SRAM 1MBIT 15NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr

Specifications of CY7C1021BNV33L-15ZXI

Memory Size
1M (64K x 16)
Package / Case
44-TSOP II
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
15ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Access Time
15 ns
Supply Voltage (max)
3.63 V
Supply Voltage (min)
2.97 V
Maximum Operating Current
160 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
3.3 V
Density
1Mb
Access Time (max)
15ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
16b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Supply Current
160mA
Operating Supply Voltage (min)
2.97V
Operating Supply Voltage (max)
3.63V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
64K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1021BNV33L-15ZXI
Manufacturer:
CYPRESS
Quantity:
1 000
Document #: 001-06433 Rev. *B
AC Test Loads and Waveforms
Note:
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .............................. –65 C to +150 C
Ambient Temperature with
Power Applied.......................................... –55 C to +125 C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
Electrical Characteristics
Capacitance
OUTPUT
Parameter
V
V
V
V
I
I
I
I
I
1. Minimum voltage is –2.0V for pulse durations of less than 20 ns.
2. Tested initially and after any design or process changes that may affect these parameters.
C
C
IX
OZ
CC
SB1
SB2
OH
OL
IH
IL
IN
OUT
Equivalent to: THÉVENIN
INCLUDING
JIG AND
SCOPE
3.3V
Parameter
30 pF
Output HIGH Voltage V
Output LOW Voltage V
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage
Current
V
Supply Current
Automatic CE
Powerdown Current
—TTL Inputs
Automatic CE
Power Down
Current
—CMOS Inputs
CC
[1]
[2]
(a)
Description
......................................–0.5V to V
Operating
EQUIVALENT
R 317
CC
to Relative GND
Input Capacitance
Output Capacitance
351
OUTPUT
R2
[1]
Description
Over the Operating Range
GND < V
GND < V
Output Disabled
V
f = f
Max. V
V
f = f
Max. V
CE > V
V
<0.3V, f = 0
OUTPUT
CC
CC
CC
IN
IN
MAX
MAX
> V
> V
INCLUDING
JIG AND
SCOPE
= Max., I
= Min., I
= Min., I
3.3V
[1]
Test Conditions
CC
CC
CC
CC
IH
.... –0.5V to +4.6V
= 1/t
I
I
, CE > V
,
or V
–0.3V,
< V
–0.3V or V
< V
30 pF
167
OUT
5 pF
OH
OL
RC
CC
CC
IN
= 8.0 mA
= –4.0 mA
,
< V
=0mA
CC
(b)
IH
IL
,
+0.5V
IN
R 317
,
T
A
Com’l
Ind’l
L
= 25 C, f = 1 MHz
1.73V
351 
Test Conditions
R2
DC Input Voltage
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Min.
0.3
2.4
2.2
Commercial
Industrial
1
1
Range
GND
3.0V
-10
Rise Time: 1 V/ns
V
CC
Max.
160
120
500
0.4
0.8
+1
+1
40
+0.3V
5
[1]
Ambient Temperature
Min.
–0.3
.................................. –0.5V to V
2.4
2.2
–1
–1
–40 C to +85 C
10%
0 C to +70 C
90%
-12
V
CC
Max.
ALL INPUT PULSES
150
170
500
0.4
0.8
+1
+1
40
+0.3V
5
CY7C1021BNV33
Max.
6
8
Min.
–0.3
2.4
2.2
–1
–1
-15
V
CC
3.3V  10%
3.3V  10%
Max.
Fall Time: 1 V/ns
140
160
500
0.4
0.8
Page 3 of 11
+1
+1
40
90%
+0.3V
5
Unit
V
pF
pF
10%
CC
CC
+0.5V
Unit
mA
mA
mA
mA
A
A
A
V
V
V
V
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