M27C512-12F1 STMicroelectronics, M27C512-12F1 Datasheet - Page 16

IC EPROM 512KBIT 120NS 28CDIP

M27C512-12F1

Manufacturer Part Number
M27C512-12F1
Description
IC EPROM 512KBIT 120NS 28CDIP
Manufacturer
STMicroelectronics
Datasheets

Specifications of M27C512-12F1

Format - Memory
EPROMs
Memory Type
UV EPROM
Memory Size
512K (64K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-CDIP (0.600", 15.24mm) Window
Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA (Read)
Current, Operating
30 mA (Read)
Current, Output, Leakage
±10 μA (Read)
Current, Supply
30 mA
Density
512K
Organization
64K×8
Package Type
FDIP28W
Temperature, Operating
0 to +70 °C
Temperature, Operating, Maximum
70 °C
Temperature, Operating, Minimum
0 °C
Time, Access
120 ns
Time, Fall
≤20 ns
Time, Rise
≤20 ns
Voltage, Input, High
6 V (Read)
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V (Read)
Voltage, Input, Low Level
-0.3 V (Min.)
Voltage, Output, High
4.3 V (Read)
Voltage, Output, Low
0.4 V (Read)
Voltage, Programmable
11.5 V (Min.)
Voltage, Supply
5 V
Memory Configuration
64K X 8
Access Time
120ns
Supply Voltage Range
4.5V To 5V
Memory Case Style
DIP
No. Of Pins
28
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1671-5

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DC and AC parameters
Table 13.
1. T
2. V
3. Sampled only, not 100% tested.
Figure 9.
16/22
Symbol
t
t
t
t
t
EHQZ
VPLVPH
t
t
t
VCHEL
t
EHVPX
t
t
t
VPHEL
VPLEL
EHQX
EHAX
QVEL
ELEH
ELQV
AVEL
A
CC
= 25 °C; V
A0-A15
Q0-Q7
V CC
GV PP
E
must be applied simultaneously with or before V
(3)
Programming mode AC characteristics
Programming and Verify modes AC waveforms
CC
t
t
t
t
t
t
t
VCS
OES
t
OEH
t
t
Alt
t
PRT
t
DFP
PW
AS
DS
DH
VR
DV
AH
= 6.25V ± 0.25V; V
Address Valid to Chip Enable Low
Input Valid to Chip Enable Low
V
V
V
Chip Enable Program Pulse Width
(Initial)
Chip Enable High to Input Transition
Chip Enable High to V
V
Chip Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Chip Enable High to Address Transition
CC
PP
PP
PP
High to Chip Enable Low
Rise Time
Low to Chip Enable Low
High to Chip Enable Low
tVCHEL
tVPHEL
tQVEL
tAVEL
PP
= 12.75V ± 0.25V
Parameter
DATA IN
PP
PROGRAM
Transition
PP
tELEH
and removed simultaneously or after V
tEHQX
tEHVPX
VALID
tVPLEL
Condition
Test
(1)(2)
VERIFY
tELQV
DATA OUT
PP
.
Min
50
95
2
2
2
2
2
2
2
0
0
Max
tEHAX
AI00737
105
130
1
tEHQZ
M27C512
Unit
µs
µs
µs
µs
ns
µs
µs
µs
µs
µs
ns
ns

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