M58LT256JST8ZA6E NUMONYX, M58LT256JST8ZA6E Datasheet - Page 23

• Manufacturer Part Number: M58LT256JST8ZA6E
• Description: IC FLASH 256MBIT 85NS 64TBGA
• Manufacturer: NUMONYX

Specifications of M58LT256JST8ZA6E

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (16Mx16)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M58LT256JST, M58LT256JSB
4.8
Program command
The program command is used to program a single word to the memory array.
If the block being programmed is protected, then the program operation aborts, the data in
the block is not changed, and the Status Register outputs the error.
Two bus write cycles are required to issue the Program command.
●
●
Once the programming has started, read operations in the bank being programmed output
the Status Register content.
During a program operation, the bank containing the word being programmed only accepts
the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the
Program/Erase Suspend commands, and all other commands are ignored. A Read Array
command is required to return the bank to read array mode.
Refer to
not being programmed.
Typical program times are given in
The program operation aborts if Reset, RP, goes to V
guaranteed when the program operation is aborted, the word must be reprogrammed.
See
the Program command.
Appendix
The first bus cycle sets up the Program command.
The second latches the address and data to be programmed and starts the
Program/Erase Controller.
Section 8
C,
Figure 19: Program flowchart and pseudocode
for detailed information about simultaneous operations allowed in banks
Table 16: Program/erase times and endurance cycles
IL
. As data integrity cannot be
for the flowchart for using
Command interface
23/108
,
.