CY7C1520JV18-300BZC Cypress Semiconductor Corp, CY7C1520JV18-300BZC Datasheet - Page 11
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CY7C1520JV18-300BZC
Manufacturer Part Number
CY7C1520JV18-300BZC
Description
IC SRAM 72MBIT 300MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1520JV18-300BZXC.pdf
(26 pages)
Specifications of CY7C1520JV18-300BZC
Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II
Memory Size
72M (2M x 36)
Speed
300MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1520JV18-300BZC
Manufacturer:
SMD
Quantity:
1 988
Company:
Part Number:
CY7C1520JV18-300BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1520JV18-300BZC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Write Cycle Descriptions
The write cycle description table for CY7C1527JV18 follows.
Write Cycle Descriptions
The write cycle description table for CY7C1520JV18 follows.
Document Number: 001-12559 Rev. *C
BWS
BWS
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
0
0
BWS
L–H
L–H
K
H
H
H
H
H
H
H
H
–
–
L
L
L
L
1
BWS
L–H
L–H
K
H
H
H
H
H
H
H
H
–
–
L
L
L
L
2
During the Data portion of a write sequence, the single byte (D
During the Data portion of a write sequence, the single byte (D
No data is written into the device during this portion of a write operation.
No data is written into the device during this portion of a write operation.
BWS
H
H
H
H
H
H
H
H
L
L
L
L
3
L–H
L–H
L–H
L–H
L–H
L–H
K
–
–
–
–
–
–
L–H During the Data portion of a write sequence, all four bytes (D
L–H During the Data portion of a write sequence, only the lower byte (D
L–H During the Data portion of a write sequence, only the byte (D
L–H During the Data portion of a write sequence, only the byte (D
L–H During the Data portion of a write sequence, only the byte (D
L–H No data is written into the device during this portion of a write operation.
K
–
–
–
–
–
–
During the Data portion of a write sequence, all four bytes (D
the device.
the device.
During the Data portion of a write sequence, only the lower byte (D
into the device. D
into the device. D
During the Data portion of a write sequence, only the byte (D
the device. D
the device. D
During the Data portion of a write sequence, only the byte (D
the device. D
the device. D
During the Data portion of a write sequence, only the byte (D
the device. D
the device. D
No data is written into the device during this portion of a write operation.
[2, 8]
[2, 8]
[8:0]
[8:0]
[17:0]
[17:0]
[26:0]
[26:0]
and D
and D
[35:9]
[35:9]
and D
and D
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
Comments
[35:18]
[35:18]
[35:27]
[35:27]
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
Comments
[8:0]
[8:0]
) is written into the device.
) is written into the device.
[35:0]
[35:0]
[26:18]
[26:18]
[35:27]
[35:27]
[17:9]
[17:9]
) are written into
) are written into
) is written into
) is written into
) is written into
) is written into
) is written into
) is written into
[8:0]
[8:0]
Page 11 of 26
) is written
) is written
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