CY7C1520JV18-300BZC Cypress Semiconductor Corp, CY7C1520JV18-300BZC Datasheet - Page 23
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CY7C1520JV18-300BZC
Manufacturer Part Number
CY7C1520JV18-300BZC
Description
IC SRAM 72MBIT 300MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1520JV18-300BZXC.pdf
(26 pages)
Specifications of CY7C1520JV18-300BZC
Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II
Memory Size
72M (2M x 36)
Speed
300MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1520JV18-300BZC
Manufacturer:
SMD
Quantity:
1 988
Company:
Part Number:
CY7C1520JV18-300BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1520JV18-300BZC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Switching Waveforms
Notes
Document Number: 001-12559 Rev. *C
24. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
25. Outputs are disabled (High-Z) one clock cycle after a NOP.
26. In this example, if address A2 = A1, then data D20 = Q10 and D21 = Q11. Write data is forwarded immediately as read results. This note applies to the whole diagram.
DQ
R/W
CQ
CQ#
LD
C#
C
K
K
A
NOP
t KHCH
1
t KH
t
t KL
t
SA
SC
A0
READ
2
t HC
t HA
t KHCH
t CYC
A1
t CQOH
READ
3
t CLZ
t KHKH
t CO
Figure 3. Read/Write/Deselect Sequence
x x xx x
Q00
NOP
4
t CCQO
t CQDOH
t DOH
Q01
t CQD
x x x x
Q10
NOP
5
Q11
t CQOH
A2
t CHZ
WRITE
6
t KH
t SD
t HD
t CCQO
CY7C1516JV18, CY7C1527JV18
CY7C1518JV18, CY7C1520JV18
t KL
D20
A3
WRITE
7
[24, 25, 26]
D21
t CQH
t CYC
t SD
D30
A4
READ
8
t HD
DON’T CARE
t KHKH
D31
t CQHCQH
9
x
x
UNDEFINED
Q40
Page 23 of 26
10
x x
Q41
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