GB100XCP12-227 GeneSiC Semiconductor, GB100XCP12-227 Datasheet - Page 3
GB100XCP12-227
Manufacturer Part Number
GB100XCP12-227
Description
IGBT Modules 1200V 100A SIC IGBT CoPak
Manufacturer
GeneSiC Semiconductor
Datasheet
1.GB100XCP12-227.pdf
(6 pages)
Specifications of GB100XCP12-227
Rohs
yes
Product
IGBT Silicon Modules
Configuration
IGBT-Inverter
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.9 V
Gate-emitter Leakage Current
- 400 nA
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-227
Maximum Gate Emitter Voltage
20 V
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Feb 2012
Figure 3: Typical Transfer Characteristics
Figure 5: Typical FWD Forward Characteristics
Figure 1: Typical Output Characteristics at 25 °C
http://www.genesicsemi.com/index.php/sic-products/copack
Figure 2: Typical Output Characteristics at 175 °C
Figure 4: Typical Blocking Characteristics
Figure 6: Typical Turn On Gate Charge
GB100XCP12-227
Pg3 of 6