SQM200N04-1M1L-GE3 Vishay/Siliconix, SQM200N04-1M1L-GE3 Datasheet - Page 4

• Manufacturer Part Number: SQM200N04-1M1L-GE3
• Description: MOSFET 40V 200A, 375W Automotive
• Manufacturer: Vishay/Siliconix

Specifications of SQM200N04-1M1L-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 200 A
• Resistance Drain-source Rds (on): 0.0011 Ohms
• Mounting Style: SMD/SMT
• Package / Case: TO-263-7L
• Fall Time: 189 ns
• Forward Transconductance Gfs (max / Min): 219 S
• Gate Charge Qg: 413 nC
• Power Dissipation: 375 W
• Rise Time: 18 ns
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 665 ns

TYPICAL CHARACTERISTICS (T
S12-2164-Rev. A, 24-Sep-12
0.001
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
- 0.3
- 0.7
- 1.1
- 1.5
0.01
100
10
0.5
0.1
0.1
10
8
6
4
2
0
1
- 50 - 25
0.0
0
Source Drain Diode Forward Voltage
I
V
D
DS
T
0.2
= 20 A
www.vishay.com
J
60
= 20 V
= 150 °C
V
0
SD
Q
- Source-to-Drain Voltage (V)
Threshold Voltage
g
- Total Gate Charge (nC)
0.4
T
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
25
J
Gate Charge
- Temperature (°C)
120
50
0.6
T
75
J
180
For technical questions, contact:
= 25 °C
100
0.8
A
I
D
125
240
I
= 250 μA
= 25 °C, unless otherwise noted)
D
1.0
= 5 mA
150
300
175
1.2
4
[e-mail]
0.005
0.004
0.003
0.002
0.001
0.000
Drain Source Breakdown vs. Junction Temperature
2.4
2.1
1.8
1.5
1.2
0.9
0.6
50
48
46
44
42
40
- 50 - 25
- 50 - 25
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
www.vishay.com/doc?91000
I
D
= 30 A
I
V
D
2
GS
= 10 mA
0
0
T
T
- Gate-to-Source Voltage (V)
J
J
- Junction Temperature (°C)
- Junction Temperature (°C)
25
25
SQM200N04-1m1L
4
50
50
T
J
= 25 °C
75
75
6
Vishay Siliconix
T
100
100
Document Number: 62679
J
= 150 °C
V
125
125
GS
V
8
GS
= 10 V
= 4.5 V
150
150
175
175
10