SQM200N04-1M1L-GE3 Vishay/Siliconix, SQM200N04-1M1L-GE3 Datasheet - Page 5

• Manufacturer Part Number: SQM200N04-1M1L-GE3
• Description: MOSFET 40V 200A, 375W Automotive
• Manufacturer: Vishay/Siliconix

Specifications of SQM200N04-1M1L-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 200 A
• Resistance Drain-source Rds (on): 0.0011 Ohms
• Mounting Style: SMD/SMT
• Package / Case: TO-263-7L
• Fall Time: 189 ns
• Forward Transconductance Gfs (max / Min): 219 S
• Gate Charge Qg: 413 nC
• Power Dissipation: 375 W
• Rise Time: 18 ns
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 665 ns

THERMAL RATINGS (T
S12-2164-Rev. A, 24-Sep-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.0001
0.001
0.01
0.1
1
10
-4
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
-3
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
For technical questions, contact:
1000
0.01
100
0.1
10
10
1
0.01
-2
* V
I
DM
T
Single Pulse
Limited by R
GS
C
Limited
= 25 °C
> minimum V
V
DS
Square Wave Pulse Duration (s)
0.1
- Drain-to-Source Voltage (V)
Safe Operating Area
10
DS(on)
-1
GS
*
at which R
I
5
D
[e-mail]
1
Limited
BVDSS Limited
DS(on)
1
is specified
10
www.vishay.com/doc?91000
100 μs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
100
10
SQM200N04-1m1L
100
Vishay Siliconix
Document Number: 62679
1000