SQM200N04-1M1L-GE3 Vishay/Siliconix, SQM200N04-1M1L-GE3 Datasheet - Page 7

• Manufacturer Part Number: SQM200N04-1M1L-GE3
• Description: MOSFET 40V 200A, 375W Automotive
• Manufacturer: Vishay/Siliconix

Specifications of SQM200N04-1M1L-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 200 A
• Resistance Drain-source Rds (on): 0.0011 Ohms
• Mounting Style: SMD/SMT
• Package / Case: TO-263-7L
• Fall Time: 189 ns
• Forward Transconductance Gfs (max / Min): 219 S
• Gate Charge Qg: 413 nC
• Power Dissipation: 375 W
• Rise Time: 18 ns
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 665 ns

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Revision: 02-Oct-12
Document Number: 91000
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