ES1CHE3/2GT Vishay Semiconductors, ES1CHE3/2GT Datasheet - Page 3

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ES1CHE3/2GT

Manufacturer Part Number
ES1CHE3/2GT
Description
Rectifiers 1.0 Amp 150 Volt 30 Amp IFSM
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of ES1CHE3/2GT

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
150 V
Forward Voltage Drop
0.92 V
Recovery Time
25 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Package / Case
SMA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
1800
RATINGS AND CHARACTERISTICS CURVES
(T
Revision: 27-Feb-13
A
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
= 25 °C unless otherwise noted)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.1
30
25
20
15
10
10
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
0
Fig. 1 - Maximum Forward Current Derating Curve
5
0
1
0.2
80
1
0.2" x 0.2" (5.0 mm x 5.0 mm)
Resistive or Inductive Load
T
90
P.C.B. Mounted on
Copper Pad Areas
J
0.4
= 125 °C
Instantaneous Forward Voltage (V)
www.vishay.com
Number of Cycles at 60 Hz
100
Lead Temperature (°C)
T
0.6
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
= 150 °C
110
8.3 ms Single Half Sine-Wave
0.8
10
T
120
J
T
= 25 °C
J
= 100 °C
1.0
130
1.2
140
150
100
1.4
3
1000
100
100
14
12
10
0.1
10
10
8
6
4
2
0
1
1
Fig. 4 - Typical Reverse Leakage Characteristics
0.1
0.1
0
Mounted on 0.2" x 0.2" (5 mm x 7 mm)
Copper Pad Areas
www.vishay.com/doc?91000
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Thermal Impedance
20
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
T
T
J
J
40
= 150 °C
= 100 °C
DiodesEurope@vishay.com
ES1A thru ES1D
T
T
J
J
60
= 125 °C
= 25 °C
10
10
Document Number: 88586
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50mVp-p
80
100
100
100

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