IPI110N20N3 G Infineon Technologies, IPI110N20N3 G Datasheet - Page 7

• Manufacturer Part Number: IPI110N20N3 G
• Description: MOSFET N-Channel 200V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPI110N20N3 G

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 10.7 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-262-3
• Fall Time: 11 nS
• Gate Charge Qg: 65 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 26 nS
• Typical Turn-off Delay Time: 41 nS
• Part # Aliases: IPI110N20N3GAKSA1 IPI110N20N3GXK SP000714304

Rev. 2.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
230
220
210
200
190
180
10
1
AV
=f(T
-60
); R
1
j
GS
); I
j(start)
=25 W
-20
D
=1 mA
10
20
t
T
AV
j
60
[°C]
[µs]
125 °C
100 °C
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
8
6
4
2
0
g(th)
gs(th)
GS
gate
0
); I
IPB107N20N3 G
DD
Q
D
=44 A pulsed
gs
20
40 V
Q
Q
gate
g
Q
40
sw
[nC]
100 V
Q
gd
IPP110N20N3 G
IPI110N20N3 G
160 V
60
2011-07-14
Q
gate
80