IPI110N20N3 G Infineon Technologies, IPI110N20N3 G Datasheet - Page 8

• Manufacturer Part Number: IPI110N20N3 G
• Description: MOSFET N-Channel 200V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPI110N20N3 G

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 10.7 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-262-3
• Fall Time: 11 nS
• Gate Charge Qg: 65 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 26 nS
• Typical Turn-off Delay Time: 41 nS
• Part # Aliases: IPI110N20N3GAKSA1 IPI110N20N3GXK SP000714304

IPB107N20N3 G
IPP110N20N3 G
IPI110N20N3 G
PG-TO220-3: Outline
Rev. 2.3
page 8
2011-07-14