NX3008NBKS,115 NXP Semiconductors, NX3008NBKS,115 Datasheet - Page 6

• Manufacturer Part Number: NX3008NBKS,115
• Description: MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBKS,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 350 mA
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 990 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
NX3008NBKS
Product data sheet
Fig 5.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
typical values
FR4 PCB, mounting pad for drain 1 cm
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
−3
duty cycle = 1
0.25
0.5
0.1
0
0.75
0.33
0.05
0.2
0.02
0.01
10
−2
All information provided in this document is subject to legal disclaimers.
10
−1
2
Rev. 1 — 1 August 2011
1
30 V, 350 mA dual N-channel Trench MOSFET
10
NX3008NBKS
10
2
t
p
© NXP B.V. 2011. All rights reserved.
(s)
017aaa035
10
3
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