BUZ73 H3046 Infineon Technologies, BUZ73 H3046 Datasheet
BUZ73 H3046
Specifications of BUZ73 H3046
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BUZ73 H3046 Summary of contents
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SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2-21 V Type DS BUZ 73 200 V Maximum Ratings Parameter Continuous drain current ˚C C Pulsed drain current T = ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA ˚ Gate threshold voltage DS, D ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ 4 DS(on)max, D Input capacitance MHz GS DS ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C C Inverse diode direct current,pulsed ˚C C Inverse diode forward voltage ...
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Power dissipation = ƒ tot tot Safe operating area = ƒ parameter: D ...
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Typ. output characteristics = ƒ parameter µ 40W tot ...
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Drain-source on-resistance = ƒ (on) j parameter 4 1.9 Ω 1 (on) 1.4 1.2 1.0 0.8 98% 0.6 typ 0.4 0.2 0.0 -60 -20 ...
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T Avalanche energy E AS parameter Ω 3. 130 mJ 110 E AS 100 ...
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Package Drawing: TO220-3 Rev. 2.4 Page 9 BUZ 73 H 2009-11-10 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...