NX3008NBK,215 NXP Semiconductors, NX3008NBK,215 Datasheet - Page 10

• Manufacturer Part Number: NX3008NBK,215
• Description: MOSFET 30V 400 MA N-CH TRENCH MOSFET
• Manufacturer: NXP Semiconductors

Specifications of NX3008NBK,215

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.4 A
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-236LS-3
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.35 W
• Factory Pack Quantity: 3000

NXP Semiconductors
8. Test information
NX3008NBK
Product data sheet
Fig 17. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
All information provided in this document is subject to legal disclaimers.
P
Rev. 1 — 2 August 2011
t
1
t
2
duty cycle δ =
006aaa812
t
t
t
1
2
30 V, 400 mA N-channel Trench MOSFET
NX3008NBK
© NXP B.V. 2011. All rights reserved.
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