SI5999EDU-T1-GE3 Vishay/Siliconix, SI5999EDU-T1-GE3 Datasheet

SI5999EDU-T1-GE3

Manufacturer Part Number

SI5999EDU-T1-GE3

Description

MOSFET 20V 6A DUAL P-CH MOSFET

Manufacturer

Vishay/Siliconix

Datasheet

1.SI5999EDU-T1-GE3.pdf (9 pages)

Specifications of SI5999EDU-T1-GE3

Rohs

yes

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 20 V

Continuous Drain Current

- 6 A

Resistance Drain-source Rds (on)

0.047 Ohms

Configuration

Dual

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

PowerPAK ChipFET Dual

Forward Transconductance Gfs (max / Min)

11 S

Gate Charge Qg

13.2 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

10.4 W

Part # Aliases

SI5999EDU-GE3

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

SI5999EDU-T1-GE3

Quantity:

3 000

Current page: 1 of 9
Download datasheet (170Kb)

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 105 °C/W.

Document Number: 67019

S10-2428-Rev. A, 25-Oct-10

Ordering Information: Si5999EDU-T1-GE3 (Lead (Pb)-free and Halogen-free)

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

ABSOLUTE MAXIMUM RATINGS (T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current (t = 300 µs)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

PRODUCT SUMMARY

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

PowerPAK ChipFET Dual

- 20

(V)

0.059 at V

0.096 at V

DS(on)

Bottom View

()

= - 4.5 V

= - 2.5 V

b, f

= 150 °C)

Dual P-Channel 20 V (D-S) MOSFET

- 6

(A)

d, e

= 25 °C, unless otherwise noted)

Steady State

6.9 nC

(Typ.)

Marking Code

t  5 s

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

XXX

Part #

Code

FEATURES

APPLICATIONS

Lot Traceability

and Date Code

• Halogen-free According to IEC 61249-2-21

• TrenchFET

• New Thermally Enhanced PowerPAK

• Typical ESD Performance 1500 V in HBM

• Compliant to RoHS Directive 2002/95/EC

• Load Switch and Charger Switch

• DC/DC Converters

Symbol

Definition

ChipFET

- Small Footprint Area

- Low On-Resistance

- Thin 0.8 mm Profile

for Portable Devices

, T

thJA

thJC

stg

Package

Power MOSFET

Typical

9.5

- 55 to 150

- 1.9

2.3

1.5

Limit

- 5

- 4

P-Channel MOSFET

± 12

10.4

- 20

260

- 6

6.7

b, c

Maximum

Vishay Siliconix

Si5999EDU

P-Channel MOSFET

www.vishay.com

°C/W

Unit

°C

Related parts for SI5999EDU-T1-GE3

SI5999EDU-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si5999EDU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5999EDU Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 2 1 1.5 2.0 0.0 1000 750 500 250 Si5999EDU Vishay Siliconix I at 150 °C GSS °C GSS Gate-Source Voltage (V) GS Gate Current vs. Gate-Source Voltage ° 125 ° °C C 0.6 1.2 1.8 ...

Page 4

... Si5999EDU Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Total Gate Charge (nC) g Gate Charge 100 T = 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.25 1.05 0.85 0.65 0. Temperature (°C) ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Si5999EDU Vishay Siliconix 100 μ 100 ...

Page 6

... Si5999EDU Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.05 0.1 0.02 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

Package Information Vishay Siliconix ® ® PowerPAK ChipFET DUAL PAD D D1 (8) D1 (7) D2 (6) SI (1) GI ( (1) GI ( (8) D1 (7) K ...

Page 8

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK 0.350 (0.014) 0.225 (0.009) Return to Index www.vishay.com 10 ® ® ChipFET Dual 2.700 (0.106) 0.300 0.650 (0.012) (0.026) 0.350 (0.014) 0.300 0.650 (0.012) (0.026) 1.175 1.525 (0.060) (0.046) Recommended ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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