PSMN1R8-30BL,118 NXP Semiconductors, PSMN1R8-30BL,118 Datasheet

PSMN1R8-30BL,118

Manufacturer Part Number

PSMN1R8-30BL,118

Description

MOSFET Std N-chanMOSFET

Manufacturer

NXP Semiconductors

Datasheet

1.PSMN1R8-30BL118.pdf (15 pages)

Specifications of PSMN1R8-30BL,118

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Resistance Drain-source Rds (on)

1.8 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

D2PAK

Minimum Operating Temperature

- 55 C

Power Dissipation

270 W

Factory Pack Quantity

800

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1. Product profile

Table 1.

[1]

Symbol

Static characteristics

Dynamic characteristics

Avalanche ruggedness

tot

DS(AL)S

DSon

G(tot)

Continuous current is limited by package.

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

junction temperature

drain-source on-state

resistance

gate-drain charge

total gate charge

non-repetitive drain-source

avalanche energy

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.



PSMN1R8-30BL

N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK

Rev. 1 — 22 March 2012

High efficiency due to low switching

and conduction losses

DC-to-DC converters

Load switching

Conditions

see

sup

≥ 25 °C; T

Figure 1

Figure

Figure 12

Figure

= 25 °C; V

= 25 °C; see

= 10 V; I

= 4.5 V; I

= 10 V; T

≤ 30 V; R

13; see

14; see

≤ 175 °C

j(init)

= 25 A; T

= 25 A; V

= 50 Ω; unclamped

Figure 2

= 10 V;

= 25 °C; I

Figure 12

Figure 15

= 100 °C;

= 25 °C;

= 15 V;

= 100 A;



Suitable for logic level gate drive

sources

Motor control

Server power supplies

[1]

Min

-55

Product data sheet

Typ

2.17

1.55

175

Max

100

270

2.6

1.8

1.1

Unit

°C

mΩ

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PSMN1R8-30BL,118 Summary of contents

Page 1

... PSMN1R8-30BL N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK Rev. 1 — 22 March 2012 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  ...

Page 2

... SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Marking code PSMN1R8-30BL All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN1R8-30BL Graphic symbol mbb076 3 Version SOT404 © NXP B.V. 2012. All rights reserved. ...

Page 3

... GS 003aad357 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN1R8-30BL Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure ° -55 - ° ...

Page 4

... Product data sheet N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN1R8-30BL 003aad381 = 10 μ 100 μ 100 (V) DS © NXP B.V. 2012. All rights reserved. ...

Page 5

... PSMN1R8-30BL Product data sheet N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK Conditions see Figure 4 Minimum footprint; mounted on a printed-circuit board - All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN1R8-30BL Min Typ Max - 0.3 0. 003aad080 δ = ...

Page 6

... V; see Figure D DS see Figure MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN1R8-30BL Min Typ Max 1.3 1.7 2.15 0 2. 200 - ...

Page 7

... (V) GS Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN1R8-30BL Min Typ Max - 0.7 1 003aad401 100 I (A) ...

Page 8

... DS Fig 10. Sub-threshold drain current as a function of 003a a c982 R DSon (mΩ) 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN1R8-30BL -1 -2 min typ - gate-source voltage ...

Page 9

... C (pF 150 200 Q (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN1R8-30BL GS(pl) V GS(th GS1 GS2 G(tot) -1 ...

Page 10

... Product data sheet N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK 100 175 ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN1R8-30BL 003aag917 = 25 ° (V) SD © NXP B.V. 2012. All rights reserved ...

Page 11

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN1R8-30BL mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved. SOT404 ...

Page 12

... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN1R8-30BL v.1 20120322 PSMN1R8-30BL Product data sheet N-channel 30 V, 1.8 mΩ logic level MOSFET in D2PAK Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN1R8-30BL © NXP B.V. 2012. All rights reserved ...

Page 14

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 22 March 2012 PSMN1R8-30BL © NXP B.V. 2012. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 22 March 2012 Document identifier: PSMN1R8-30BL ...

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