SIHP12N60E-GE3 Vishay/Siliconix, SIHP12N60E-GE3 Datasheet

SIHP12N60E-GE3

Manufacturer Part Number

SIHP12N60E-GE3

Description

MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS

Manufacturer

Vishay/Siliconix

Datasheet

1.SIHP12N60E-E3.pdf (8 pages)

Specifications of SIHP12N60E-GE3

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

600 V

Continuous Drain Current

12 A

Resistance Drain-source Rds (on)

380 mOhms at 10 V

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-220AB-3

Minimum Operating Temperature

- 55 C

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

BOSTOCK HK LIMITED

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SIHP12N60E-GE3

Manufacturer:

VISHAY

Quantity:

2 722

Company:

Meier Automation Equipment Co., Limited

Part Number:

SIHP12N60E-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

H&T Electronics

Part Number:

SIHP12N60E-GE3

Quantity:

70 000

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

c. 1.6 mm from case.

d. I

S12-0646-Rev. C, 26-Mar-12

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

Continuous Drain Current (T

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt

Soldering Recommendations (Peak Temperature)

DS(on)

max. (nC)

(nC)

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

(V) at T

(nC)

 I

= 50 V, starting T

max. at 25 °C ()

, dI/dt = 100 A/μs, starting T

TO-220AB

max.

www.vishay.com

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

= 25 °C, L = 11.6 mH, R

= 150 °C)

= 10 V

= 25 °C.

N-Channel MOSFET

E Series Power MOSFET

Single

For technical questions, contact:

650

= 25 , I

= 25 °C, unless otherwise noted)

0.38

at 10 V

= 4.5 A.

for 10 s

= 125 °C

TO-220AB

SiHP12N60E-E3

SiHP12N60E-GE3

= 100 °C

= 25 °C

FEATURES

• Low Figure-of-Merit (FOM) R

• Low Input Capacitance (C

• Reduced Switching and Conduction Losses

• Ultra Low Gate Charge (Q

• Avalanche Energy Rated (UIS)

• Material categorization: For definitions please see

APPLICATIONS

• Server and Telecom Power Supplies

• Switch Mode Power Supplies (SMPS)

• Power Factor Correction Power Supplies (PFC)

• Lighting

• Industrial

www.vishay.com/doc?99912

- High-Intensity Discharge (HID)

- Fluorescent Ballast Lighting

- Welding

- Induction Heating

- Motor Drives

- Battery Chargers

- Renewable Energy

- Solar (PV Inverters)

hvm@vishay.com

SYMBOL

www.vishay.com/doc?91000

dV/dt

, T

stg

iss

- 55 to + 150

)

LIMIT

300

± 20

600

117

147

7.8

1.2

x Q

Vishay Siliconix

SiHP12N60E

Document Number: 91479

UNIT

W/°C

V/ns

°C

Related parts for SIHP12N60E-GE3

SIHP12N60E-GE3 Summary of contents

Page 1

... Power Factor Correction Power Supplies (PFC) • Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting • Industrial S - Welding - Induction Heating - Motor Drives - Battery Chargers - Renewable Energy - Solar (PV Inverters) TO-220AB SiHP12N60E-E3 SiHP12N60E-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 100 ° 125 ° ...

Page 2

... dI/dt = 100 A/μ RRM while V is rising from oss DS while V is rising from oss DS 2 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHP12N60E Vishay Siliconix MAX. UNIT 62 °C/W 0.85 MIN. TYP. MAX. 600 - - = 0. ± 100 ...

Page 3

... Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage 3 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHP12N60E Vishay Siliconix = 100 120 140 160 T , Junction Temperature (° iss MHz GS C ...

Page 4

... Fig Temperature vs. Drain-to-Source Voltage 0.001 0.01 Pulse Time (s) 4 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHP12N60E Vishay Siliconix 50 75 100 125 150 T , Case Temperature (° 100 120 140 160 T , Junction Temperature (° ...

Page 5

... ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Fig Basic Gate Charge Waveform For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHP12N60E Vishay Siliconix Charge Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. ...

Page 6

... Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel 6 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHP12N60E Vishay Siliconix + + Document Number: 91479 ...

Page 7

E Ø b( e(1) Revison: 08-Oct-12 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TO-220AB A ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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