SIHP12N60E-GE3 Vishay/Siliconix, SIHP12N60E-GE3 Datasheet - Page 4
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SIHP12N60E-GE3
Manufacturer Part Number
SIHP12N60E-GE3
Description
MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHP12N60E-E3.pdf
(8 pages)
Specifications of SIHP12N60E-GE3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
12 A
Resistance Drain-source Rds (on)
380 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220AB-3
Minimum Operating Temperature
- 55 C
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIHP12N60E-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
S12-0646-Rev. C, 26-Mar-12
Fig. 7 - Typical Source-Drain Diode Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1000
100
0.01
100
0.1
0.1
10
10
* V
1
1
0.2
1
GS
Fig. 8 - Maximum Safe Operating Area
Operation in this Area
Limited by R
T
T
Single Pulse
> minimum V
C
J
0.01
0.4
= 150 °C
0.1
T
= 25 °C
www.vishay.com
1
J
0.0001
V
= 150 °C
Limited by R
V
SD
DS
0.2
0.1
Duty Cycle = 0.5
, Source-Drain Voltage (V)
0.02
0.6
Single Pulse
, Drain-to-Source Voltage (V)
0.05
DS(on)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
GS
0.8
DS(on)
at which R
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
*
BVDSS Limited
T
1.0
J
= 25 °C
100
1.2
DS(on)
I
DM
0.001
V
For technical questions, contact:
= Limited
GS
1.4
is specified
= 0 V
1.6
100 μs
1000
10 ms
1 ms
Pulse Time (s)
4
0.01
hvm@vishay.com
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Temperature vs. Drain-to-Source Voltage
750
725
700
675
650
625
600
575
550
525
12
15
9
6
3
0
- 60
25
www.vishay.com/doc?91000
- 40 - 20
T
50
J
0.1
T
, Junction Temperature (°C)
J
0
, Case Temperature (°C)
20 40 60 80 100 120 140
75
100
Vishay Siliconix
SiHP12N60E
Document Number: 91479
125
1
150
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