FCD380N60E Fairchild Semiconductor, FCD380N60E Datasheet - Page 7
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FCD380N60E
Manufacturer Part Number
FCD380N60E
Description
MOSFET 600V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FCD380N60E.pdf
(9 pages)
Specifications of FCD380N60E
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
10.2 A
Resistance Drain-source Rds (on)
380 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D-PAK
Fall Time
10 ns
Forward Transconductance Gfs (max / Min)
10 S
Gate Charge Qg
34 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
106 W
Rise Time
9 ns
Typical Turn-off Delay Time
64 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FCD380N60E
Manufacturer:
INTEL
Quantity:
1 000
Part Number:
FCD380N60E
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2012 Fairchild Semiconductor Corporation
FCD380N60E Rev. C1
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
I
I
V
V
GS
GS
SD
SD
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
Driver
Driver
DUT
DUT
I
I
FM
FM
I
I
D =
D =
D =
SD
SD
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Body Diode
Body Diode
Same Type
Same Type
V
V
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
+
+
as DUT
as DUT
_
_
DS
DS
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
V
V
SD
SD
SD
SD
Body Diode Reverse Current
Body Diode Reverse Current
controlled by pulse period
controlled by pulse period
7
I
I
RM
RM
L
L L
G
G
di/dt
di/dt
V
V
V
V
10V
10V
DD
DD
DD
DD
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