BUK7230-55A /T3 NXP Semiconductors, BUK7230-55A /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK7230-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7230-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.03 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Fall Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 88 W
• Rise Time: 68 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 83 ns
• Part # Aliases: BUK7230-55A,118

NXP Semiconductors
BUK7230-55A_2
Product data sheet
Fig 13. Reverse diode current; typical values
Fig 15. Input and reverse transfer capacitances as a function of gate-source voltage; typical values
(A)
I
S
100
80
60
40
20
0
0
0.4
T
j
= 175 °C
0.8
(pF)
1600
1200
C
800
400
1.2
0
10
T
j
= 25 °C
−2
All information provided in this document is subject to legal disclaimers.
V
SD
03na42
(V)
1.4
Rev. 02 — 16 March 2010
10
−1
1
Fig 14. Turn-on gate charge characteristics; typical
V
(V)
C
C
C
GS
oss
iss
rss
10
8
6
4
2
0
10
values
0
V
N-channel TrenchMOS standard level FET
DS
03na48
(V)
10
2
V
10
DD
= 14 V
BUK7230-55A
20
V
DD
= 44 V
Q
© NXP B.V. 2010. All rights reserved.
G
(nC)
03na43
30
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