IRFW720BTM Fairchild Semiconductor, IRFW720BTM Datasheet - Page 4

• Manufacturer Part Number: IRFW720BTM
• Description: MOSFET 400V N-Channel B-FET
• Manufacturer: Fairchild Semiconductor

Specifications of IRFW720BTM

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.3 A
• Resistance Drain-source Rds (on): 1.4 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 35 ns
• Forward Transconductance Gfs (max / Min): 2.8 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.13 W
• Rise Time: 35 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 35 ns

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
1
0
Figure 7. Breakdown Voltage Variation
10
0
-50
T
V
vs Temperature
J
, Junction Temperature [
DS
10
0
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
1 0
1
1 0
※ Notes :
- 1
1. T
2. T
3. Single Pulse
0
1 0
C
J
- 5
= 150
= 25
D = 0 .5
0 . 0 2
0 . 0 5
0 . 0 1
DS(on)
50
0 . 2
0 . 1
o
C
o
C
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
10
1 0
(Continued)
2
o
C]
1 ms
- 4
※ Notes :
s in g le p u ls e
1. V
2. I
100 s
D
t
G S
= 250 μ A
1
= 0 V
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
150
1 0
- 3
200
10
3
1 0
- 2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r, D = t
3 . T
1 0
- 1
P
θ J C
J M
DM
-50
- T
(t) = 2 .5 7 ℃ /W M a x .
50
C
= P
vs Case Temperature
D M
T
t
vs Temperature
J
T
1
, Junction Temperature [
C
* Z
t
1 0
0
, Case Temperature [ ℃ ]
2
1
/t
θ J C
0
75
2
(t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 1.65 A
= 10 V
Rev. B, November 2001
200
150