1N5356B-T Micro Commercial Components (MCC), 1N5356B-T Datasheet - Page 3

• Manufacturer Part Number: 1N5356B-T
• Description: Zener Diodes 5.0W 19V
• Manufacturer: Micro Commercial Components (MCC)

Specifications of 1N5356B-T

• Product Category: Zener Diodes
• Zener Voltage: 19 V
• Voltage Tolerance: 5 %
• Zener Current: 250 mA
• Power Dissipation: 5 W
• Maximum Reverse Leakage Current: 0.5 uA
• Maximum Zener Impedance: 3 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: DO-15
• Configuration: Single
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 4000
• Voltage Regulation Accuracy: 40 mV

1N5338B THRU 1N5369B
3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave
4. VOLTAGE REGULATION (Vz) - Test conditions for voltage regulation are as follows: Vz measurements are made
5. MAXIMUM REGULATOR CURRENT (I
APPLICATION NOTE:
Revision: A
current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge
current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on
logarithmic paper. Examples of this, using the 6.8v , is shown in Figure 6. Mounting
contact located as specified in Note 3. (T
at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the
same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40+/- 10 ms.
(T
5% type unit. Therefore, it applies only to the B-suffix device. The actual I
value of 5 watts divided by the actual Vz of the device. T
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
q
power dissipation.
DT
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.
A
=25C ). Mounting contact located as specified in Note2.
LA
Since the actual voltage available from a given Zener
Lead Temperature, T
Junction Temperature, T
JL
is the lead‐to‐ambient thermal resistance and P
is the increase in junction temperature above the lead
T
T
L
DT
L
J
= q
, should be determined from:
= T
JL
J
LA
, may be found from:
= q
L
www.mccsemi.com
P
+ DT
JL
D
+ T
P
JL
D
A
ZM
) - The maximum current shown is based on the maximum voltage of a
A
=25
D
).
is the
L
3 of 6
=75Cat maximum from the device body.
of P
Changes in voltage, V
q
from Figures 2 and 3.
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.
VZ
For worst‐case design, using expected limits of I
Under high power‐pulse operation, the Zener voltage will
Data of Figure 4 should not be used to compute surge
, the Zener voltage temperature coefficient, is found
D
and the extremes of T
ZM
for any device may not exceed the
Z
DV = q
, can then be found from:
VZ
Micro Commercial Components
J
DT
(DT
M C C
J
J
) may be estimated.
2011/01/01
Z
, limits
TM