SI7860DP-E3 Vishay/Siliconix, SI7860DP-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7860DP-E3
• Description: MOSFET N-Ch 30V 18A
• Manufacturer: Vishay/Siliconix

Specifications of SI7860DP-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Resistance Drain-source Rds (on): 9.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Fall Time: 12 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.8 W
• Rise Time: 12 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET/PowerPAK
• Typical Turn-off Delay Time: 46 ns

Si7860DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71854.
www.vishay.com
4
- 0.3
- 0.6
- 0.9
0.6
0.3
0.0
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10
10
- 4
- 4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0
T
Threshold Voltage
I
D
J
= 250 µA
- Temperature (°C)
0.02
25
10
- 3
0.05
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
75
10
- 3
100
10
- 2
125
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
- 1
10
- 2
200
160
120
80
40
0
0.001
1
Single Pulse Power, Junction-to-Ambient
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
- 1
JM
Time (s)
- T
t
0.1
1
A
S09-0222-Rev. E, 09-Feb-09
= P
t
2
Document Number: 71854
DM
Z
th
thJA
100
JA
t
t
1
2
(t)
= 125 °C
1
600
1
10