SI4947ADY-E3 Vishay/Siliconix, SI4947ADY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4947ADY-E3
• Description: MOSFET 30V 3.9A 2W
• Manufacturer: Vishay/Siliconix

Specifications of SI4947ADY-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Resistance Drain-source Rds (on): 80 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 9 ns
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 21 ns

Si4947ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71101.
www.vishay.com
4
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
0.05
0.02
0.02
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
0.1
0.2
0.1
Single Pulse
0
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
Single Pulse
50
10
I
D
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Foot
0.05
100
10
-2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
30
24
18
12
10
1
6
0
10
-1
-2
Single Pulse Power, Junction-to-Ambient
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
1
S09-0870-Rev. D, 18-May-09
A
1
= P
1
t
2
Document Number: 71101
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 87 °C/W
10
600
10
100