BUK9606-55B /T3 NXP Semiconductors, BUK9606-55B /T3 Datasheet - Page 8
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BUK9606-55B /T3
Manufacturer Part Number
BUK9606-55B /T3
Description
MOSFET HIGH PERF TRENCHMOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9606-55B_T3.pdf
(13 pages)
Specifications of BUK9606-55B /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
15 V
Continuous Drain Current
146 A
Resistance Drain-source Rds (on)
0.0054 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
106 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
258 W
Rise Time
95 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
117 ns
Part # Aliases
BUK9606-55B,118
NXP Semiconductors
BUK9606-55B_4
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
V
GS(th)
R
(V)
(mΩ)
DSon
2.5
2.0
1.5
1.0
0.5
0
7
6
5
4
−60
junction temperature
of gate-source voltage; typical values
Gate-source threshold voltage as a function of
3
0
7
60
max
min
typ
11
120
V
GS
T
j
(V)
(°C)
03nj64
03ng52
180
15
Rev. 04 — 23 July 2009
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
1.5
0.5
a
−1
−2
−3
−4
−5
−6
2
1
0
gate-source voltage
-60
factor as a function of junction temperature
0
0
min
1
BUK9606-55B
N-channel TrenchMOS FET
60
typ
2
120
max
V
© NXP B.V. 2009. All rights reserved.
GS
T
j
(V)
03ne89
( ° C)
03ng53
180
3
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