BUK765R2-40B /T3 NXP Semiconductors, BUK765R2-40B /T3 Datasheet
BUK765R2-40B /T3
Specifications of BUK765R2-40B /T3
Related parts for BUK765R2-40B /T3
BUK765R2-40B /T3 Summary of contents
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... BUK765R2-40B N-channel TrenchMOS standard level FET Rev. 3 — 22 November 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 3 — 22 November 2011 BUK765R2-40B Graphic symbol mbb076 3 Version SOT404 © NXP B.V. 2011. All rights reserved ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 22 November 2011 BUK765R2-40B N-channel TrenchMOS standard level FET Min - - -20 [1] Figure 1; - [2] - [2] Figure 1 - Figure ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK765R2-40B Product data sheet / All information provided in this document is subject to legal disclaimers. Rev. 3 — 22 November 2011 BUK765R2-40B N-channel TrenchMOS standard level FET =10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK765R2-40B Product data sheet N-channel TrenchMOS standard level FET Conditions see Figure 4 minimum footprint ; mounted on a printed-circuit board −4 − All information provided in this document is subject to legal disclaimers. Rev. 3 — 22 November 2011 BUK765R2-40B Min Typ Max - - 0. 03nj25 t p δ ...
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... ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 3 — 22 November 2011 BUK765R2-40B Min Typ Max = 25 ° -55 ° 4 ...
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... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 22 November 2011 BUK765R2-40B N-channel TrenchMOS standard level FET 18 DSon ) Drain-source on-state resistance as a function of gate-source voltage; typical values ...
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... Fig 10. Gate-source threshold voltage as a function of 03nk20 300 400 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 22 November 2011 BUK765R2-40B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − ...
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... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 3 — 22 November 2011 BUK765R2-40B N-channel TrenchMOS standard level FET C iss C oss C rss 0 − function of drain-source voltage; typical values 03nk14 = 25 ° ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 22 November 2011 BUK765R2-40B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. SOT404 05-02-11 06-03- ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK765R2-40B v.3 20111122 • Modifications: Various changes to content. BUK765R2-40B v.2 20090116 BUK765R2-40B Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...
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... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 3 — 22 November 2011 BUK765R2-40B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 22 November 2011 BUK765R2-40B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 22 November 2011 Document identifier: BUK765R2-40B ...