ALD1109EPAL Advanced Linear Devices, ALD1109EPAL Datasheet - Page 10
ALD1109EPAL
Manufacturer Part Number
ALD1109EPAL
Description
MOSFET Dual N-Ch Pair Array
Manufacturer
Advanced Linear Devices
Datasheet
1.ALD1109EPAL.pdf
(11 pages)
Specifications of ALD1109EPAL
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
10 V
Gate-source Breakdown Voltage
10.6 V
Continuous Drain Current
12 mA
Resistance Drain-source Rds (on)
500 Ohms
Mounting Style
Through Hole
Package / Case
PDIP-8
Forward Transconductance Gfs (max / Min)
0.0014 S
Power Dissipation
500 mW
Factory Pack Quantity
50
ALD110800/ALD110800A/ALD110900/ALD110900A
S (45°)
e
S (45°)
D
L
H
b
A
A
E
1
C
SOIC-8 PACKAGE DRAWING
ø
8 Pin Plastic SOIC Package
Advanced Linear Devices
Dim
D-8
A
ø
A
C
E
H
S
b
e
L
1
1.35
0.10
0.35
0.18
4.69
3.50
5.70
0.60
0.25
Min
0°
Millimeters
1.27 BSC
0.937
Max
1.75
0.25
0.45
0.25
5.00
4.05
6.30
0.50
8°
0.053
0.004
0.014
0.007
0.185
0.140
0.224
0.024
0.010
Min
0°
0.050 BSC
Inches
0.069
0.010
0.018
0.010
0.196
0.160
0.248
0.037
0.020
10 of 11
Max
8°