2SK3561(Q) Toshiba
2SK3561(Q)
Manufacturer Part Number
2SK3561(Q)
Description
MOSFET N-Ch 500V 8A Rdson 0.85 Ohm
Manufacturer
Toshiba
Specifications of 2SK3561(Q)
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
8 A
Resistance Drain-source Rds (on)
0.85 Ohms
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
TO-220 NIS
Fall Time
70 ns
Power Dissipation
400 W
Rise Time
70 ns
Factory Pack Quantity
50
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