VP0106N3 Supertex, VP0106N3 Datasheet
VP0106N3
Specifications of VP0106N3
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VP0106N3 Summary of contents
Page 1
... MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired ...
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... Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V t (ON) t d(ON) 0V OUTPUT 10% VDD Supertex inc. I Power Dissipation D † (pulsed (mA) (W) -800 1 25°C unless otherwise specified) A Min ...
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... V (volts) DS Transconductance vs. Drain Current 250 V = -25V DS 200 150 100 -0.2 -0.4 -0.6 I (amperes) D Maximum Rated Safe Operating Area -10 -1.0 TO-92 (DC) -0 -0.01 -0.1 -1.0 V (volts) DS Supertex inc. -1.0 -0 -10V -0.6 GS -9V -8V -0.4 -7V -6V -0.2 -5V -4V -30 - 125 1.0 -0.8 -1.0 1.0 0.8 0.6 0.4 0.2 -10 -100 ...
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... DS -0 -0.6 -0.4 -0 (volts) GS Capacitance vs. Drain-to-Source Voltage 100 f = 1MHz -10 -20 V (volts) DS Supertex inc. (cont.) 100 150 = - 125 -10 C ISS C OSS C RSS -30 -40 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Drain Current ...
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... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing (s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...