VP0550N3 Supertex, VP0550N3 Datasheet - Page 3

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VP0550N3

Manufacturer Part Number
VP0550N3
Description
MOSFET 500V 125Ohm
Manufacturer
Supertex
Datasheet

Specifications of VP0550N3

Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.05 A
Resistance Drain-source Rds (on)
80 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Fall Time
15 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1000 mW
Rise Time
15 ns
Factory Pack Quantity
1000
Typical Turn-off Delay Time
10 ns
Typical Performance Curves
-0.001
-0.01
100
-1.0
-0.1
-0.5
-0.4
-0.3
-0.2
-0.1
80
60
40
20
0
0
Supertex inc.
-1
0
0
Maximum Rated Safe Operating Area
Transconductance vs. Drain Current
V
T
DS
C
TO-92(DC)
= 25
= -25V
-0.05
-10
O
Output Characteristics
C
-10
-0.10
I
-20
V
D
(amperes)
DS
V
DS
(volts)
(volts)
-0.15
-30
-100
V
1235 Bordeaux Drive, Sunnyvale, CA 94089
T
GS
A
150
= -55
25
= -10V
O
O
-40
-0.20
C
C
O
C
-8V
-7V
-6V
-5V
-0.25
-1000
-50
3
-100
-80
-60
-40
-20
1.0
0.8
0.6
0.4
0.2
2.0
1.0
0
0
0
0.001
Power Dissipation vs. Case Temperature
0
0
Thermal Response Characteristics
Tel: 408-222-8888
25
Saturation Characteristics
-2
0.01
50
V
t
-4
P
DS
(seconds)
T
(volts)
C
75
(
0.1
O
-8V
C)
www.supertex.com
-6
V
100
GS
= -10V
1.0
-8
P
T
125
D
C
-5V
-4V
= 25
= 1.0W
-6V
O
C
150
-10
10
VP0550

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