SI7407DN-T1 Vishay/Siliconix, SI7407DN-T1 Datasheet - Page 3

• Manufacturer Part Number: SI7407DN-T1
• Description: MOSFET 12V 15.6A 1.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI7407DN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 9.9 A
• Resistance Drain-source Rds (on): 12 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 50 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 50 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 200 ns

TYPICAL CHARACTERISTICS T
Document Number: 71912
S-80581-Rev. D, 17-Mar-08
0.04
0.03
0.02
0.01
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
V
0.2
On-Resistance vs. Drain Current
= 15.6 A
5
GS
= 6 V
9
V
= 1.8 V
SD
Q
T
J
g
= 150 °C
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
10
I
D
Gate Charge
- Drain Current (A)
18
0.6
15
T
27
J
= 25 °C
20
0.8
A
V
V
= 25 °C, unless otherwise noted
GS
GS
36
= 2.5 V
= 4.5 V
25
1.0
30
1.2
45
5000
4000
3000
2000
1000
0.04
0.03
0.02
0.01
0.00
1.3
1.2
1.1
1.0
0.9
0.8
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
V
I
rss
D
GS
I
= 15.6 A
D
2
= 5 A
= 4.5 V
1
V
V
T
DS
GS
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
4
2 5
Capacitance
I
D
2
C
= 15.6 A
oss
5 0
Vishay Siliconix
6
C
iss
3
7 5
Si7407DN
8
www.vishay.com
100
4
10
125
150
12
5
3