SI7407DN-T1 Vishay/Siliconix, SI7407DN-T1 Datasheet - Page 3
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SI7407DN-T1
Manufacturer Part Number
SI7407DN-T1
Description
MOSFET 12V 15.6A 1.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI7407DN-T1.pdf
(12 pages)
Specifications of SI7407DN-T1
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
9.9 A
Resistance Drain-source Rds (on)
12 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK 1212-8
Fall Time
50 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.5 W
Rise Time
50 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
200 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7407DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS T
Document Number: 71912
S-80581-Rev. D, 17-Mar-08
0.04
0.03
0.02
0.01
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
V
0.2
On-Resistance vs. Drain Current
= 15.6 A
5
GS
= 6 V
9
V
= 1.8 V
SD
Q
T
J
g
= 150 °C
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
10
I
D
Gate Charge
- Drain Current (A)
18
0.6
15
T
27
J
= 25 °C
20
0.8
A
V
V
= 25 °C, unless otherwise noted
GS
GS
36
= 2.5 V
= 4.5 V
25
1.0
30
1.2
45
5000
4000
3000
2000
1000
0.04
0.03
0.02
0.01
0.00
1.3
1.2
1.1
1.0
0.9
0.8
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
V
I
rss
D
GS
I
= 15.6 A
D
2
= 5 A
= 4.5 V
1
V
V
T
DS
GS
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
4
2 5
Capacitance
I
D
2
C
= 15.6 A
oss
5 0
Vishay Siliconix
6
C
iss
3
7 5
Si7407DN
8
www.vishay.com
100
4
10
125
150
12
5
3